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Product Detailed Parameters
- Description：MOSFET N/P-CH 12V 9.5A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：12V, 20V
- Current - Continuous Drain (Id) @ 25°C：9.5A, 6.9A
- Rds On (Max) @ Id, Vgs：17mOhm @ 11.8A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30.4nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：1525pF @ 6V
- Power - Max：2.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC1018UPD-13 is a complementary pair enhancement mode MOSFET containing an N-channel Q1 and P-channel Q2 in a PowerDI5060-8 package. Q1 offers a drain-source voltage of 12V, with RDS(ON) at 17mΩ (VGS=4.5V) supporting 9.5A continuous current. Q2 provides -20V, with RDS(ON) at 32mΩ (VGS=-4.5V) supporting -6.9A. The device operates from -55°C to +150°C, features low input capacitance for fast switching, and complies with RoHS standards.
Feature Summary
- Complementary N-channel and P-channel MOSFETs integrated into a single thermally efficient package
- Optimized for high conversion efficiency with minimized on-state losses
- Fast switching speed supported by low input capacitance
- Qualified to JEDEC standards for high reliability
Applications
- Notebook battery power management
- DC-DC converters
- Loadswitch applications
Procurement Notes
Verify the ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm that the component meets specific environmental requirements, as it is fully lead-free, halogen-free, and antimony-free. Ensure the application environment remains within the specified operating temperature range of -55°C to +150°C.
Selection Notes
Select this component when a compact complementary pair is required for low-voltage power management. The 12V N-channel and -20V P-channel combination suits notebook and portable electronics. Evaluate thermal resistance and junction-to-ambient characteristics against the expected load currents to ensure operation stays within safe limits.
Part Context
This part belongs to Diodes Incorporated's complementary pair enhancement mode MOSFET series. It utilizes the PowerDI5060-8 case style, designed to minimize thermal resistance while maintaining a small footprint. The product line targets cost-efficient designs requiring robust performance in portable and industrial power applications.
Replacement Considerations
No alternative product is officially recommended for new designs based on available documentation. Verify pin compatibility and electrical parameters if considering cross-brand substitutes.
