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Product Detailed Parameters
- Description：MOSFET N/P-CH 12V 5.1A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：5.1A (Ta), 3.9A (Ta)
- Rds On (Max) @ Id, Vgs：34mOhm @ 4.6A, 4.5V, 59mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.2nC @ 4.5V, 13nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1003pF @ 6V, 1028pF @ 6V
- Power - Max：1.36W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC1030UFDB-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single U-DFN2020-6 package. The N-channel component features a maximum drain-source voltage of 12V, with on-resistance values of 34mΩ at VGS=4.5V and 70mΩ at VGS=1.5V. The P-channel component has a -12V breakdown voltage, offering on-resistance of 59mΩ at VGS=-4.5V and 215mΩ at VGS=-1.5V. Both devices are designed for low input capacitance and high switching performance.
Feature Summary
- Integrated complementary N-channel and P-channel enhancement mode MOSFETs in a compact footprint
- Optimized for minimal on-state resistance while maintaining superior switching performance
- Features ESD protected gates to enhance reliability during handling and operation
- Compliant with RoHS standards and constructed using halogen-free green materials
Applications
- Load Switching
- Power Management Functions
- Portable Power Adaptors
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets the required environmental specifications, including lead-free status and compliance with EU directives regarding restricted substances. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.
Selection Notes
Select this component when space-constrained designs require both N-channel and P-channel switching capabilities within a single surface-mount package. Evaluate the thermal resistance characteristics against the expected power dissipation levels in the target application. Consider the gate threshold voltages to ensure compatibility with the available control logic signals for efficient turn-on and turn-off operations.
Part Context
This part belongs to the DMC1030UFDB series of complementary MOSFET pairs from Diodes Incorporated. The '-13' suffix specifically denotes the 10,000-unit tape and reel packaging format, distinguishing it from other variants like the '-7' which utilizes a 3,000-unit reel. All variants share identical electrical and mechanical specifications.
Replacement Considerations
Direct replacements include the DMC1030UFDB-7, which shares identical electrical parameters but differs only in packaging quantity. Other complementary MOSFET pairs in similar packages should be evaluated based on matching voltage ratings, on-resistance limits, and pinout configurations before substitution.
