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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 4.6A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.6A (Ta), 3.2A (Ta)
- Rds On (Max) @ Id, Vgs：35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.6nC @ 4.5V, 5.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：369pF @ 10V, 440pF @ 10V
- Power - Max：700mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC2053UVTQ is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated in a TSOT26 package. It integrates one N-channel and one P-channel device. The N-channel unit provides a drain-source breakdown voltage (BVDSS) of 20V, with a maximum on-resistance (RDS(ON)) of 35mΩ at VGS=4.5V and 43mΩ at VGS=2.5V. Continuous drain current reaches 4.6A at +25°C. The P-channel unit features a BVDSS of -20V, with RDS(ON) values of 74mΩ at VGS=-4.5V and 110mΩ at VGS=-2.5V, supporting a continuous drain current of -3.2A. Total power dissipation is rated at 0.7W steady state.
Feature Summary
- Complementary N-Channel and P-Channel Enhancement Mode MOSFETs
- Low On-State Resistance for High Efficiency Power Management
- Fast Switching Speed with Low Input/Output Leakage
- Totally Lead-Free, Fully RoHS Compliant, Halogen and Antimony Free
Applications
- Backlighting
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix to confirm packaging quantity. The DMC2053UVTQ-7 variant is supplied in tape and reel packages containing 3000 units per reel. The DMC2053UVTQ-13 variant contains 10000 units per reel. Confirm that the required automotive qualification standards, including AEC-Q101 compliance and IATF16949:2016 manufacturing certification, align with your project specifications before finalizing procurement.
Selection Notes
Select this component when a compact dual MOSFET solution is required for low-voltage power switching applications. The TSOT26 package offers a small footprint suitable for space-constrained designs. Ensure gate drive voltages meet the specified thresholds for optimal RDS(ON) performance. Consider the thermal resistance characteristics and operating temperature range (-55°C to +150°C) when designing heat dissipation strategies for the target application environment.
Part Context
This part belongs to the DMC series of complementary MOSFETs from Diodes Incorporated. It is designed as a next-generation device to minimize on-state resistance while maintaining superior switching performance. The product is qualified for automotive applications requiring specific change control and is PPAP capable. It is manufactured in facilities certified under IATF16949:2016 standards.
Replacement Considerations
Direct replacements must match the TSOT26 package, 20V rating, and complementary N/P channel configuration. Verify pinout compatibility and electrical parameters such as RDS(ON) and gate charge against the original datasheet requirements to ensure circuit functionality is maintained without modification.
