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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.03A, 700mA
- Rds On (Max) @ Id, Vgs：480mOhm @ 200mA, 5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：37.1pF @ 10V
- Power - Max：450mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMC2400UV-13 is a complementary pair enhancement mode MOSFET in an SOT563 package. It integrates an N-channel device (Q1) and a P-channel device (Q2). Q1 offers a drain-source voltage of 20V, with on-resistance at 0.5Ω (VGS=4.5V) and 0.9Ω (VGS=1.8V), supporting continuous currents up to 1030mA. Q2 provides -20V breakdown, with on-resistance at 1.0Ω (VGS=-4.5V) and 2.0Ω (VGS=-1.8V), supporting continuous currents up to -700mA. The gate threshold voltage is less than 1V. Total power dissipation reaches 0.45W at +25°C ambient.
Feature Summary
- Complementary N-channel and P-channel configuration for efficient power management
- Low on-state resistance optimized for high efficiency applications
- Ultra-small surface mount SOT563 package design
- ESD protected gate structure
Applications
- Power Management Functions
- Battery Operated Systems
- Solid-State Relays
- Load Switch
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10000-unit tape and reel packaging format. Confirm that the component meets RoHS 3 and halogen-free requirements as specified by Diodes Incorporated. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.
Selection Notes
Select this component when a compact dual-transistor solution is required for low-voltage switching. The low gate threshold voltage below 1V makes it suitable for systems driven by low logic levels. Evaluate thermal constraints carefully due to the small SOT563 footprint and limited power dissipation capabilities.
Part Context
This part belongs to the DMC series of complementary MOSFETs from Diodes Incorporated. It is designed to replace discrete N-channel and P-channel pairs in space-constrained designs. The SOT563 package allows for automated surface-mount assembly while maintaining electrical performance comparable to larger packages.
Replacement Considerations
Check pinout compatibility if substituting with other SOT563 complementary pairs. Verify that alternative components meet the 20V breakdown requirement and similar on-resistance specifications. Ensure the replacement supports the same operating temperature range of -55°C to +150°C.
