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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 9A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：9A (Ta), 6.8A (Ta)
- Rds On (Max) @ Id, Vgs：16mOhm @ 7A, 10V, 28mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1184pF @ 15V, 1188pF @ 15V
- Power - Max：1.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC3016LNS-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) within a single PowerDI3333-8 package. The N-channel transistor provides a drain-source breakdown voltage of 30V, with maximum on-resistance values of 16mΩ at VGS=10V and 20mΩ at VGS=4.5V. Continuous drain current reaches 9.0A at 25°C. The P-channel counterpart offers a -30V breakdown voltage, with maximum on-resistance of 28mΩ at VGS=-10V and 38mΩ at VGS=-4.5V, supporting a continuous drain current of -6.8A at 25°C.
Feature Summary
- Complementary N-channel and P-channel enhancement mode MOSFETs integrated in a single package
- Low on-state resistance to minimize conduction losses
- Fast switching speed supported by low input capacitance
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- Power management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix when purchasing. The suffix '-7' indicates packaging in 2000-unit tape and reel format. Confirm that the required component matches this exact quantity per reel specification before finalizing procurement orders.
Selection Notes
Select this component for applications requiring matched N-channel and P-channel pairs in compact surface-mount designs. Ensure the operating gate-source voltage aligns with the specified thresholds and check thermal dissipation requirements against the 1.3W power rating at 25°C ambient temperature.
Part Context
This part belongs to the DMC3016 series of complementary MOSFETs from Diodes Incorporated. It utilizes the PowerDI3333-8 (Type UXB) case configuration, which provides a compact footprint suitable for high-density PCB layouts while maintaining robust thermal performance through its exposed copper pad design.
Replacement Considerations
DMC3016LSD-13
FAQ
What are the maximum continuous drain currents for the N-channel and P-channel devices?
At TA = +25°C, the N-channel device supports 9.0A, while the P-channel device supports -6.8A.
Does the DMC3016LNS support avalanche energy ratings?
Yes, both channels have a rated avalanche energy (EAS) of 24 mJ based on a low frequency and duty cycles keeping TJ at +25°C with L = 0.1mH.
What is the thermal resistance from junction to case?
The thermal resistance from junction to case (RθJC) is 12 °C/W.
