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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 9.1A/6A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：9.1A, 6A
- Rds On (Max) @ Id, Vgs：20mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：631pF @ 15V
- Power - Max：2.5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The DMC3018LSD-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q2) and a P-channel device (Q1) within a single SO-8 package. The N-channel transistor provides a maximum drain-source voltage of 30V, a continuous drain current of 9.1A at +25°C, and a static on-resistance of 20mΩ at VGS=10V. The P-channel counterpart offers a -30V breakdown voltage, a -6A continuous drain current, and a maximum on-resistance of 45mΩ at VGS=-10V. Both devices operate across a temperature range of -55°C to +150°C.
Feature Summary
- Complementary Pair Configuration
- Low On-Resistance
- Low Gate Threshold Voltage
- Fast Switching Speed
Applications
- Power Management Functions
- Analog Switch
- Load Switch
Procurement Notes
Verify the component against the official datasheet DS31310 Rev. 10-3 to confirm authenticity. Ensure the marking code matches C3018LD and check for AEC-Q101 qualification if automotive reliability is required. Confirm the package type is SO-8 with tape and reel packaging containing 2,500 units per reel.
Selection Notes
Select this component when a matched N-channel and P-channel MOSFET pair is needed in a compact SO-8 footprint. The low gate threshold voltage supports efficient drive from standard logic levels. Verify that the thermal resistance and power dissipation ratings meet the specific circuit requirements under expected ambient temperatures.
Part Context
The DMC3018LSD-13 belongs to the DMC3018LSD series of complementary enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance. This integration simplifies board layout and reduces component count in high-efficiency power management designs compared to using discrete transistors.
Replacement Considerations
The datasheet explicitly recommends the DMC3021LSD as a replacement for new design use. Verify pin compatibility and electrical parameter alignment before substituting.
