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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 20A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc), 17A (Tc)
- Rds On (Max) @ Id, Vgs：31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id：1.85V @ 250µA, 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.8nC @ 10V, 13.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：383pF @ 15V, 782pF @ 15V
- Power - Max：1.18W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (Type UXD)
- Grade：-
- Qualification：-
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Overview
The DMC3020UDVW-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and P-channel device within a single POWERDI3333-8/SWP package. The N-channel transistor (Q1) supports a drain-source voltage of 30V with a maximum continuous drain current of 20A at 25°C, while the P-channel transistor (Q2) provides -30V breakdown and -17A continuous current. Static on-resistance for Q1 is 31mΩ at VGS=10V and 40mΩ at VGS=4.5V. Q2 exhibits 42mΩ resistance at VGS=-10V and 75mΩ at VGS=-4.5V. Total power dissipation reaches 2.21W under thermal bias conditions.
Feature Summary
- Complementary Pair Configuration
- Low On-Resistance
- Fast Switching Speed
- ESD Protected Gate
Applications
- Power-management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix to confirm packaging quantity. The '-13' designation indicates a tape and reel carrier containing 3,000 units. Confirm that the required component matches this exact packing specification before finalizing procurement orders to ensure compatibility with automated assembly equipment.
Selection Notes
Select this component when a matched N-channel and P-channel MOSFET pair is required in a compact surface-mount footprint. Ensure the application operates within the specified 30V drain-source voltage limits. Verify that the gate drive voltage meets the minimum requirements to achieve the rated low on-resistance values for optimal efficiency.
Part Context
This part belongs to the DMC3020UDVW series from Diodes Incorporated. It utilizes the POWERDI3333-8/SWP package, which features wettable flanks to facilitate optical inspection during manufacturing. The device is designed for high-efficiency power management applications requiring superior switching performance alongside minimized on-state resistance.
Replacement Considerations
Direct replacements must match the complementary N/P channel configuration and the POWERDI3333-8/SWP package dimensions. Verify electrical parameters such as VDSS, RDS(ON), and ID ratings against the original specifications to ensure circuit functionality is maintained without modification.
