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The DMC3025LDV-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) within a single PowerDI3333-8 package. The N-channel transistor supports a drain-source voltage of 30 V, with a maximum on-resistance of 25 mΩ at VGS = 10 V and a continuous drain current of 15 A. The P-channel counterpart features a -30 V breakdown voltage, a maximum on-resistance of 25 mΩ at VGS = -10 V, and a continuous drain current of -15 A. Both devices operate across a temperature range of -55°C to +150°C.
Verify the specific ordering suffix '-13' against official documentation to confirm the tape and reel packaging quantity of 3000 units. Ensure that the component matches the exact datasheet revision DS38937 Rev. 1-2 to guarantee electrical characteristics align with design requirements. Cross-reference the manufacturer's marking code 'SD9' for authenticity during incoming inspection.
Select this component when a matched complementary pair is required for synchronous rectification or bridge driver circuits. The PowerDI3333-8 package provides a compact footprint suitable for space-constrained designs. Evaluate thermal performance based on the junction-to-ambient resistance values provided in the datasheet under specific board layout conditions.
This part belongs to the DMC3025 series of complementary MOSFETs from Diodes Incorporated. It shares the same core electrical specifications as the DMC3025LDV-7 variant, differing primarily in the packaging configuration. The series is designed to minimize on-state resistance while maintaining superior switching performance for efficient power management.
DMC3025LDV-7