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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 3.6A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.6A (Ta), 2.8A (Ta)
- Rds On (Max) @ Id, Vgs：60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA, 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.3nC @ 10V, 8.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：395pF @ 15V, 324pF @ 15V
- Power - Max：830mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC3060LVTQ is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) within a single TSOT26 package. The N-channel transistor provides a drain-source voltage of 30V, with an on-resistance of 60mΩ at VGS=10V and 100mΩ at VGS=4.5V. Continuous drain currents are rated at 3.6A for the N-channel and -2.8A for the P-channel. The P-channel device features a breakdown voltage of -30V and an on-resistance of 95mΩ at VGS=-10V. The component operates across a temperature range of -55°C to +150°C.
Feature Summary
- Complementary N-Channel and P-Channel Enhancement Mode MOSFETs
- Low On-Resistance and Low Input Capacitance
- Fast Switching Speed and Low Input/Output Leakage
- Totally Lead-Free, Fully RoHS Compliant, Halogen and Antimony Free
Applications
- Backlighting
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix when purchasing. The suffix '-7' indicates a tape and reel packaging quantity of 3,000 units, while the suffix '-13' denotes a tape and reel packaging quantity of 10,000 units. Confirm that the required packaging format aligns with your automated assembly equipment specifications before placing orders.
Selection Notes
Select this component for applications requiring a matched complementary MOSFET pair in a compact surface-mount footprint. Ensure the gate drive voltage meets the minimum requirements for the desired on-resistance levels. Verify thermal management capabilities against the specified junction-to-ambient thermal resistance values under your specific PCB copper layout conditions.
Part Context
This part belongs to the DMC3060L series of complementary MOSFETs from Diodes Incorporated. These devices utilize advanced trench technology to achieve low on-state resistance while maintaining fast switching performance. The series is designed to optimize efficiency in power management circuits where space constraints and thermal performance are critical design factors.
Replacement Considerations
Direct replacements must match the TSOT26 package, 30V rating, and complementary configuration. Verify pinout compatibility and electrical parameters such as RDS(ON) and gate charge. Consult manufacturer cross-reference lists for validated alternatives.
