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The DMC31D5UDJ-7B is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) within a single SOT963 package. The N-channel transistor supports a drain-source voltage of 30V with a maximum on-resistance of 1.5Ω at VGS=4.5V and a continuous current of 220mA. The P-channel counterpart handles -30V, featuring a maximum on-resistance of 5Ω at VGS=-4.5V and a continuous current of -200mA. Both devices exhibit low gate threshold voltages and fast switching characteristics suitable for power management.
Verify the specific ordering suffix to confirm taping orientation requirements for automated assembly lines. Confirm RoHS compliance status and lead-free finish specifications against project environmental standards. Ensure the SOT963 package dimensions align with the target PCB footprint and soldering profile constraints before finalizing procurement orders.
Select this component when a matched N/P-channel pair is required for push-pull or complementary switching topologies. Evaluate the on-resistance values at the intended gate drive voltage to ensure adequate current handling. Consider the thermal resistance and power dissipation limits relative to the expected operating junction temperature and ambient conditions.
This part belongs to the DMC31D5UDJ series of complementary MOSFETs from Diodes Incorporated. The -7B suffix indicates a specific tape and reel packaging orientation distinct from other variants like the -7 suffix. It shares core electrical characteristics with the base DMC31D5UDJ device while differing only in manufacturing packaging details.
Direct substitutes include the DMC31D5UDJ-7 variant, which shares identical electrical specifications but utilizes a different taping orientation. Verify pinout compatibility and package dimensions when considering alternative manufacturers' complementary MOSFET pairs.