DMC3400SDW-13

DMC3400SDW-13

$0.30
  • Description:MOSFET N/P-CH 30V 0.65A SOT363
  • Series:-

SKU:4717ada91a4d Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 30V 0.65A SOT363
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:650mA, 450mA
  • Rds On (Max) @ Id, Vgs:400mOhm @ 590mA, 10V
  • Vgs(th) (Max) @ Id:1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:1.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:55pF @ 15V
  • Power - Max:310mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:-
  • Qualification:-

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DMC3400SDW-13

Overview

The DMC3400SDW-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) within a single SOT-363 package. The N-channel transistor supports a drain-source voltage of 30V with a maximum continuous drain current of 0.65A at +25°C, while the P-channel counterpart handles -30V and -0.45A. Key electrical parameters include a maximum on-resistance of 0.4Ω for Q1 and 0.9Ω for Q2 at VGS = ±10V. Total gate charge reaches 1.4nC for the N-channel and 1.3nC for the P-channel at VGS = ±10V. Input capacitance is specified at 55pF for Q1 and 54pF for Q2.

Feature Summary

  • Complementary N/P-channel configuration in a compact surface-mount package
  • Low on-state resistance optimized for high-efficiency power management
  • Fast switching speed supported by low input capacitance
  • Integrated ESD protection diodes on both gate terminals

Applications

  • Motor control circuits
  • Power-management functions
  • DC-DC converters

Procurement Notes

Verify the ordering suffix '-13' corresponds to the specific tape and reel quantity of 10,000 units as defined in the manufacturer's documentation. Confirm that the component meets RoHS 3 compliance standards and is halogen-free before finalizing procurement specifications. Ensure the supplier provides traceability data consistent with Diodes Incorporated manufacturing records.

Selection Notes

Select this component when space-constrained designs require a matched N/P-channel pair for load switching or bridge applications. Evaluate thermal performance based on the junction-to-ambient resistance of 406°C/W on standard FR-4 PCBs. Consider the gate threshold voltage range and total gate charge requirements relative to the driving circuit capabilities to ensure reliable switching transitions.

Part Context

This part belongs to the DMC3400 series of complementary MOSFET arrays from Diodes Incorporated. The 'DW' designation indicates the SOT-363 package type, while the '-13' suffix specifies the 10,000-unit tape and reel packaging format. It serves as a compact solution for replacing discrete N and P-channel transistors in dual-transistor configurations.

Replacement Considerations

Direct replacements within the same family include DMC3400SDW-7, which shares identical electrical characteristics but utilizes a 3,000-unit tape and reel packaging format. Verify pinout compatibility and thermal resistance values when substituting components from other manufacturers offering similar SOT-363 complementary pairs.

DMC3400SDW-13DMC3400SDW-13
$0.30
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