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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 0.65A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：650mA, 450mA
- Rds On (Max) @ Id, Vgs：400mOhm @ 590mA, 10V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：55pF @ 15V
- Power - Max：310mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The DMC3400SDW-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single SOT363 surface-mount package. The N-channel transistor supports a drain-source voltage of 30V with a maximum continuous drain current of 0.65A at 25°C, while the P-channel counterpart handles -30V and -0.45A. Key electrical parameters include a maximum on-resistance of 0.4Ω for the N-channel and 0.9Ω for the P-channel at VGS = 10V. The component features low input capacitance (55pF) and total gate charge (1.4nC @ 10V), facilitating fast switching speeds suitable for power management applications.
Feature Summary
- Complementary N/P-channel configuration in a compact SOT363 package
- Low on-state resistance to minimize conduction losses
- Fast switching performance driven by low input capacitance and gate charge
- Integrated ESD protection diodes on both gates
Applications
- Motor control circuits
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the ordering suffix '-7' corresponds to the 3000-unit tape and reel carrier format specified in the datasheet. Confirm that the required RoHS compliance and halogen-free status align with project specifications. Ensure the SOT363 footprint matches the suggested pad layout dimensions provided in the mechanical data section before finalizing procurement.
Selection Notes
Select this component when a dual-channel solution is required for high-efficiency power management. The low thermal resistance and small package size make it suitable for space-constrained designs. Evaluate the specific on-resistance requirements at the intended gate drive voltage, as RDS(ON) varies significantly between 4.5V and 10V gate levels for both channel types.
Part Context
The DMC3400SDW-7 belongs to the DMC3400 series of complementary MOSFETs from Diodes Incorporated. This series is engineered to balance low static resistance with dynamic switching efficiency. The 'DW' suffix indicates the SOT363 package type, while the '-7' suffix designates the standard 3000-piece tape and reel packaging option used for automated assembly processes.
Replacement Considerations
Direct replacements must match the SOT363 pinout and complementary N/P structure. Verify that substitute components meet or exceed the 30V breakdown voltage and current ratings. Check if alternative parts offer similar gate charge characteristics to maintain equivalent switching speeds in the target application.
