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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 6DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：1.1A, 700mA
- Rds On (Max) @ Id, Vgs：460mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：65.9pF @ 25V
- Power - Max：390mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-XFDFN Exposed Pad
- Supplier Device Package：X2-DFN1310-6 (Type B)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC3730UFL3-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) within a single X2-DFN1310-6 package. The N-channel transistor provides a maximum drain-source voltage of 30V, with an on-resistance of 460mΩ at VGS=4.5V and a continuous drain current of 1.1A. The P-channel counterpart features a -30V breakdown voltage, a maximum on-resistance of 1000mΩ at VGS=-4.5V, and a continuous drain current of -0.7A. Both devices operate across a temperature range of -55°C to +150°C.
Feature Summary
- Complementary N-channel and P-channel MOSFETs integrated in a single ultra-small surface mount package
- Designed to minimize on-state resistance while maintaining superior switching performance
- Features ESD protected gates and low gate threshold voltage for efficient drive requirements
- Qualified to AEC-Q101 standards for high reliability automotive applications
Applications
- Motor Control
- Power Management Functions
- Backlighting
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS38571 Rev. 3-2 to confirm authenticity. Ensure the marking code reads '730' and the package matches the X2-DFN1310-6 specification. Confirm RoHS compliance and lead-free status as documented in the manufacturer's quality definitions before finalizing procurement.
Selection Notes
Select this component when space-constrained designs require both N-channel and P-channel switching capabilities. The low profile and small footprint make it suitable for portable electronics. Verify that the required gate drive voltages align with the specified thresholds and on-resistance characteristics for optimal efficiency.
Part Context
This part belongs to the DMC3730 series of complementary MOSFETs from Diodes Incorporated. It serves as a compact solution for power management tasks where dual polarity switching is necessary. The integration reduces board space compared to using discrete components.
Replacement Considerations
Direct replacements must match the X2-DFN1310-6 package and provide equivalent electrical ratings for both N-channel and P-channel devices. Verify pinout compatibility and thermal resistance specifications to ensure seamless integration into existing layouts.
FAQ
What is the maximum continuous drain current for the N-channel device?
The maximum continuous drain current for the N-channel device (Q1) is 1.1A at TA = +25°C.
Is the DMC3730UFL3 qualified for automotive applications?
Yes, the device is qualified to AEC-Q101 standards for high reliability automotive applications.
What is the package type for this component?
The component uses an X2-DFN1310-6 (Type B) surface mount package with a total footprint of 1.3 mm².
