DMC3730UVT-7

DMC3730UVT-7

$0.41
  • Description:MOSFET N/P-CH 25V 0.68A TSOT26
  • Series:-

SKU:8347392b8155 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 25V 0.68A TSOT26
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel Complementary
  • FET Feature:-
  • Drain to Source Voltage (Vdss):25V
  • Current - Continuous Drain (Id) @ 25°C:680mA (Ta), 460mA (Ta)
  • Rds On (Max) @ Id, Vgs:450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id:1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:1.64nC @ 4.5V, 1.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:50pF @ 10V, 63pF @ 10V
  • Power - Max:700mW
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:TSOT-26
  • Grade:Automotive
  • Qualification:AEC-Q101

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DMC3730UVT-7

Overview

The DMC3730UVT-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) within a single TSOT26 package. The N-channel component provides a drain-source breakdown voltage of 25V, with maximum on-resistance values of 0.45Ω at VGS=4.5V, 0.60Ω at VGS=2.7V, and 0.73Ω at VGS=1.8V. The continuous drain current for the N-channel is 0.68A. The P-channel component features a -25V breakdown voltage, with maximum on-resistance values of 1.1Ω at VGS=-4.5V, 1.5Ω at VGS=-2.7V, and 2.2Ω at VGS=-1.8V. Its continuous drain current is rated at -0.46A.

Feature Summary

  • Complementary N-channel and P-channel configuration in a compact TSOT26 package
  • Optimized low on-state resistance to minimize conduction loss
  • Superior switching performance with low input capacitance
  • ESD protected gate structure

Applications

  • Backlighting circuits
  • DC-DC converters
  • Power management functions

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm RoHS compliance status and lead-free definitions directly from the manufacturer's quality documentation before procurement. Ensure the component meets AEC-Q101 reliability standards if automotive applications are intended.

Selection Notes

Select this component when space-constrained designs require both high-side and low-side switching capabilities in a single footprint. Evaluate the thermal resistance characteristics against the expected power dissipation requirements. Consider the gate threshold voltage ranges to ensure compatibility with the driving logic levels used in the target application circuit.

Part Context

This part belongs to the DMC3730 series of complementary MOSFETs produced by Diodes Incorporated. It utilizes silicon technology and is housed in a TSOT26 surface-mount case. The product is designed for high-efficiency power management applications requiring minimal on-state resistance while maintaining fast switching speeds.

Replacement Considerations

Consult official cross-reference lists or datasheets for verified substitutes. Ensure any replacement maintains the same TSOT26 pinout configuration and matches the electrical ratings for both N-channel and P-channel devices.

FAQ

What is the maximum operating temperature range for the DMC3730UVT?

The junction and storage temperature range is specified as -55°C to +175°C.

Does the DMC3730UVT include internal protection features?

Yes, the device includes ESD protected gates and integrated gate protection diodes for both the N-channel and P-channel components.

What is the total power dissipation rating for this component?

The total power dissipation is rated at 0.7W under steady-state conditions on an FR-4 PC board with minimum recommended pad layout, and up to 0.9W with thermal bias to a bottom layer copper plate.

DMC3730UVT-7DMC3730UVT-7
$0.41
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