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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 1.1A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：1.1A (Ta), 700mA (Ta)
- Rds On (Max) @ Id, Vgs：460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA, 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.9nC @ 4.5V, 1.6nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：40.8pF @ 25V, 54pF @ 15V
- Power - Max：540mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：-
- Qualification：-
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Overview
The DMC3732UVT-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) within a single TSOT26 package. The N-channel transistor provides a drain-source voltage of 30V, with an on-resistance of 460mΩ at VGS=4.5V and a continuous drain current of 1.1A. The P-channel counterpart offers a -30V breakdown voltage, featuring an on-resistance of 1000mΩ at VGS=-4.5V and a continuous drain current of -0.7A. Both devices are designed for low input capacitance and fast switching speeds.
Feature Summary
- Complementary N-channel and P-channel enhancement mode MOSFETs integrated in a single compact package
- Optimized to minimize on-state resistance while maintaining superior switching performance
- Low input and output leakage characteristics suitable for power management applications
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- Backlighting circuits
- DC-DC converters
- Power-management functions
Procurement Notes
Verify the specific ordering suffix when purchasing. The '-7' suffix indicates a tape and reel packaging quantity of 3,000 units. Confirm that the required component matches this exact packing configuration to ensure compatibility with automated assembly equipment. Cross-reference the datasheet revision number DS45051 Rev. 3 - 2 during procurement to guarantee access to the most current electrical specifications and mechanical dimensions.
Selection Notes
Select this component for designs requiring a matched N-channel and P-channel pair in a space-constrained environment. Ensure the gate drive voltage meets the minimum requirements for the desired on-resistance; for instance, use 4.5V for optimal N-channel performance. Evaluate the thermal resistance parameters against the expected power dissipation levels. Verify that the maximum operating temperature range of -55°C to +150°C aligns with the environmental conditions of the target application.
Part Context
This part belongs to the DMC3732UVT series of complementary MOSFETs from Diodes Incorporated. It is specifically packaged in a TSOT26 form factor to facilitate surface-mount assembly. The product line focuses on high-efficiency power management solutions. An automotive-compliant variant, designated as DMC3732UVTQ, is available under a separate datasheet for applications requiring stricter qualification standards.
Replacement Considerations
An automotive-compliant substitute is available under the part number DMC3732UVTQ. Verify package pinout compatibility before substitution. Ensure the replacement part meets all electrical ratings, including drain-source voltage and on-resistance values.
