DMC4029SSD-13

$0.96

Description：MOSFET N/P-CH 40V 9A 8SO
Series：-

SKU:63805dd9343e Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 40V 9A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：9A (Ta), 6.5A (Ta)
Rds On (Max) @ Id, Vgs：24mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.8nC @ 4.5V, 10.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1060pF @ 20V, 1154pF @ 20V
Power - Max：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：Automotive
Qualification：AEC-Q101

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DMC4029SSD-13

Overview

The DMC4029SSD-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated in an SO-8 package. It integrates one N-channel and one P-channel device. The N-channel Q2 offers a drain-source voltage of 40V, with on-resistance of 24mΩ at VGS=10V and 32mΩ at VGS=4.5V. Continuous drain current reaches 7.0A at 25°C. The P-channel Q1 provides -40V breakdown, with on-resistance of 45mΩ at VGS=-10V and 55mΩ at VGS=-4.5V. Total power dissipation is 1.3W steady state at 25°C.

Feature Summary

Complementary N/P-channel configuration for high-efficiency power management
Low input capacitance and fast switching speed characteristics
Totally lead-free and fully RoHS compliant construction

Applications

DC-DC converters
Power-management functions
Backlighting circuits

Procurement Notes

Verify the specific ordering suffix to confirm packing quantity and carrier type. Confirm that the component meets required automotive or industrial qualification standards if applicable. Ensure thermal design accounts for the specified junction-to-ambient resistance values under actual PCB copper layout conditions.

Selection Notes

Select this component when a matched N/P pair is required for synchronous rectification or bridge applications. Evaluate gate threshold voltage requirements against the controller logic levels. Verify that the SO-8 package thermal performance meets the system's continuous current and ambient temperature constraints.

Part Context

This part belongs to the DMC4029 series of complementary MOSFETs from Diodes Incorporated. It is designed as a next-generation solution minimizing on-state resistance while maintaining superior switching performance compared to previous iterations in the family.

Replacement Considerations

Check pinout compatibility and electrical parameters such as RDS(ON) and BVDSS before substituting. Verify package dimensions match the existing footprint. Automotive grade equivalents may require the Q-suffix variant.

FAQ

What is the maximum continuous drain current for the N-channel device?

The N-channel Q2 has a maximum continuous drain current of 7.0A at TA = +25°C.

Is this component qualified for automotive applications?

This specific part is qualified to JEDEC standards for high reliability. For AEC-Q100/101/104/200 qualification, refer to the related automotive grade (Q-suffix) parts.