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Product Detailed Parameters
- Description：MOSFET N/P-CH 40V 9A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：9A (Ta), 6.5A (Ta)
- Rds On (Max) @ Id, Vgs：24mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.8nC @ 4.5V, 10.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1060pF @ 20V, 1154pF @ 20V
- Power - Max：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC4029SSDQ-13 is a complementary enhancement mode MOSFET pair manufactured by Diodes Incorporated in an SO-8 package. The N-channel device (Q2) provides a drain-source voltage of 40V, with on-resistance values of 24mΩ at VGS=10V and 32mΩ at VGS=4.5V. The P-channel device (Q1) offers -40V breakdown, with on-resistance of 45mΩ at VGS=-10V and 55mΩ at VGS=-4.5V. Continuous drain currents reach 7.0A for Q2 and -5.1A for Q1 at +25°C. Total power dissipation is rated at 1.3W steady state. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Complementary N-Channel and P-Channel configuration designed for high-efficiency power management applications
- Low input capacitance and fast switching speed characteristics
- Totally lead-free and fully RoHS compliant construction
Applications
- DC-DC converters
- Power-management functions
- Backlighting circuits
Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. Confirm that the component meets AEC-Q standards if automotive grade requirements are necessary. Ensure the SO-8 package dimensions align with the target PCB layout constraints. Validate moisture sensitivity level compliance during storage and handling procedures.
Selection Notes
Select this component when a matched complementary pair is required for synchronous rectification or bridge driver stages. Evaluate thermal resistance parameters based on the specific copper pad layout used on the printed circuit board. Consider gate threshold voltage variations across the operating temperature range for logic compatibility.
Part Context
This part belongs to the DMC4029SSD series of complementary MOSFETs. It utilizes an SO-8 surface mount package. The product is designed to minimize on-state resistance while maintaining superior switching performance. It is intended for use in high-efficiency power management systems.
Replacement Considerations
For automotive applications requiring specific change control, refer to the related automotive grade parts with the Q-suffix. Verify pinout compatibility and electrical specifications before substituting with other complementary MOSFET pairs.
