DMC6022SSD-13

Overview

The DMC6022SSD-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single SO-8 package. The N-channel transistor provides a drain-source voltage of 60V, a continuous drain current of 6.0A at 25°C, and a maximum on-resistance of 29mΩ at VGS=10V. The P-channel counterpart offers a -60V breakdown voltage, a -5.0A continuous current rating, and a maximum on-resistance of 50mΩ at VGS=-10V. Both transistors operate within a junction temperature range of -55°C to +150°C.

Feature Summary

• Complementary N-channel and P-channel configuration in a single surface-mount package
• Optimized for low on-state resistance while maintaining fast switching performance
• Qualified to AEC-Q101 standards for high reliability applications
• Totally lead-free and fully RoHS compliant with halogen and antimony-free green materials

Applications

• DC-DC Converters
• Power Management Functions
• Backlighting

Procurement Notes

Verify the component against the official datasheet DS39056 Rev. 1-2 to confirm electrical parameters and pinout compatibility. Ensure that the SO-8 package dimensions align with the target PCB footprint layout. Confirm compliance with specific environmental directives such as RoHS 2 if required by the end application. Validate thermal management requirements based on the specified junction-to-ambient resistance values under steady-state conditions.

Selection Notes

Select this component when a matched complementary pair is required for synchronous rectification or power switching circuits. The integrated design reduces board space compared to discrete solutions. Evaluate the gate threshold voltage and total gate charge to ensure compatibility with the intended driver circuitry. Consider the thermal resistance characteristics and the operating temperature range to ensure reliable performance under expected load conditions.

Part Context

This part belongs to the DMC6022 series of complementary MOSFETs from Diodes Incorporated. It is designed to replace discrete N-channel and P-channel devices in compact power management designs. The SO-8 packaging facilitates automated assembly and provides efficient thermal dissipation through the exposed copper leadframe.

Replacement Considerations

Direct replacements include other complementary MOSFET pairs in SO-8 packages with similar voltage and current ratings. Verify pinout compatibility and on-resistance specifications before substitution. Check for equivalent thermal characteristics and gate drive requirements to ensure seamless integration into existing circuits.

FAQ

What is the maximum continuous drain current for the N-channel device?

The maximum continuous drain current for the N-channel device (Q1) is 6.0A at an ambient temperature of +25°C.

Does the DMC6022SSD-13 meet automotive reliability standards?

Yes, the device is qualified to AEC-Q101 standards for high reliability applications.

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150°C.