DMC62D2SV-7

$0.06

Description：MOSFET N/P-CH 60V 0.48A SOT563
Series：-

SKU:e3c351714eee Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 60V 0.48A SOT563
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：480mA (Ta), 320mA (Ta)
Rds On (Max) @ Id, Vgs：1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA, 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.04nC @ 10V, 1.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：41pF @ 30V, 40pF @ 25V
Power - Max：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563
Grade：-
Qualification：-

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DMC62D2SV-7

Overview

The DMC62D2SV-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT563 surface-mount package. It integrates an N-channel device (Q1) and a P-channel device (Q2). The N-channel transistor features a drain-source voltage of 60V, a maximum continuous drain current of 480mA at +25°C, and a static on-resistance of 1.7Ω at VGS=10V. The P-channel transistor has a -60V breakdown voltage, a -320mA continuous drain current, and a 4Ω on-resistance at VGS=-10V. Total power dissipation is rated at 0.5W with a thermal resistance of 261°C/W under steady-state conditions.

Feature Summary

Complementary N-channel and P-channel configuration for general-purpose interfacing and analog switching
Optimized low on-state resistance combined with fast switching speed for high efficiency
Ultra-small SOT563 surface mount package design
Lead-free construction fully compliant with RoHS directives

Applications

General-purpose interfacing switches
Power management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity. The -7 suffix indicates a tape and reel carrier containing 3,000 units. Confirm that the required component meets all applicable automotive qualification standards if intended for such environments, as standard versions may differ from AEC-Q100 qualified parts.

Selection Notes

Select this component when a compact dual-transistor solution is required for low-voltage signal routing or power control. Ensure the application current remains within the 480mA limit for the N-channel and 320mA for the P-channel at ambient temperatures near 25°C. Verify gate drive voltages align with the specified thresholds for optimal on-resistance performance.

Part Context

This part belongs to the DMC62D series of complementary MOSFETs from Diodes Incorporated. It shares the same electrical characteristics and pinout as the DMC62D0SV, differing primarily in the manufacturing date code marking scheme associated with its specific production run.

Replacement Considerations

DMC62D0SV-7

FAQ

What is the maximum operating junction temperature?

The maximum operating and storage temperature range extends up to +150°C.

How does the on-resistance vary with temperature?

The on-resistance increases as the junction temperature rises, as illustrated in the typical on-resistance versus junction temperature graphs provided in the datasheet.