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Product Detailed Parameters
- Description：MOSFET N/P-CH 60V 0.48A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：480mA (Ta), 320mA (Ta)
- Rds On (Max) @ Id, Vgs：1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA, 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.04nC @ 10V, 1.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：41pF @ 30V, 40pF @ 25V
- Power - Max：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC62D2SVQ-7 is a complementary pair enhancement mode MOSFET in an SOT563 package. It integrates an N-channel device (Q1) and a P-channel device (Q2). Q1 offers a drain-source voltage of 60V, with on-resistance values of 1.7Ω at VGS=10V and 3Ω at VGS=4.5V. Continuous drain current reaches 480mA at 25°C. Q2 provides -60V breakdown, with on-resistance of 4Ω at VGS=-10V and 6Ω at VGS=-4.5V. Continuous drain current for Q2 is -320mA at 25°C. The component operates between -55°C and +150°C.
Feature Summary
- AEC-Q101 qualified for automotive applications
- Low on-resistance and low gate threshold voltage
- Ultra-small surface mount package
Applications
- General-purpose interfacing switches
- Power management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix to confirm packaging quantity. The -7 suffix indicates a tape and reel carrier containing 3,000 units. Confirm RoHS compliance and lead-free status through official manufacturer documentation before finalizing procurement specifications.
Selection Notes
Select this component when space-constrained designs require dual-channel switching capabilities. Ensure the application logic matches the complementary N-P channel configuration. Verify that the required gate drive voltages align with the specified on-resistance thresholds for optimal performance.
Part Context
This part belongs to the DMC62D series of complementary MOSFETs from Diodes Incorporated. It shares the same functional architecture as variants like the DMC62D0SVQ-7 but differs in specific electrical parameters and package configurations within the broader product family.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided datasheet. Evaluate alternative components based on matching pinout compatibility, voltage ratings, and thermal characteristics if substitution is necessary.
FAQ
What is the maximum continuous drain current for the N-channel device?
The maximum continuous drain current for the N-channel device (Q1) is 480mA at an ambient temperature of +25°C.
Is this component suitable for high-temperature environments?
Yes, the operating and storage temperature range extends up to +150°C, making it suitable for demanding thermal conditions.
What is the typical input capacitance for the N-channel device?
The typical input capacitance (Ciss) for the N-channel device is 41pF, measured at VDS=30V and VGS=0V.
