DMC67D8UFDB-7

DMC67D8UFDB-7

$0.11
  • Description:MOSFET 41V-60V U-DFN2020-6
  • Series:-

SKU:68870e3004a5 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET 41V-60V U-DFN2020-6
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:-
  • Configuration:-
  • FET Feature:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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DMC67D8UFDB-7

Overview

The DMC67D8UFDB-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a breakdown voltage range of 41V to 60V and is housed in a U-DFN2020-6 surface-mount package. The component is supplied in tape and reel quantities of 3,000 units. Designed for silicon technology, it supports surface mount installation and operates within a temperature range suitable for general electronic applications.

Feature Summary

  • Single N-channel enhancement mode configuration
  • U-DFN2020-6 compact surface-mount packaging
  • Silicon-based semiconductor construction

Applications

    Procurement Notes

    Verify the specific part number against official manufacturer documentation to confirm exact electrical parameters such as on-resistance and gate charge. Ensure compatibility with the target PCB footprint and thermal management requirements. Confirm RoHS compliance status through current datasheets. Check for any recent product change notices that may affect pinout or material composition before finalizing procurement.

    Selection Notes

    Select this component when a small-footprint N-channel MOSFET with moderate voltage ratings is required. The U-DFN2020-6 package offers space efficiency for dense layouts. Consider the thermal characteristics of the package for power dissipation needs. Verify that the gate drive voltage aligns with the threshold specifications for reliable switching performance in the intended circuit design.

    Part Context

    This device belongs to the Diodes Incorporated discrete MOSFET portfolio, focusing on low-voltage switching applications. The U-DFN series provides leadless packages for improved thermal performance and smaller board area compared to traditional plastic packages. It serves as a fundamental active component for signal switching and load control in consumer and industrial electronics.

    Replacement Considerations

    Consult official substitution guides from Diodes Incorporated for verified alternatives. Cross-reference pinouts and electrical limits carefully. Generic equivalents may not match the specific package dimensions or thermal characteristics.

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