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Product Detailed Parameters
- Description：MOSFET N/P-CH 60V/20V 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V, 20V
- Current - Continuous Drain (Id) @ 25°C：390mA (Ta), 2.9A (Ta)
- Rds On (Max) @ Id, Vgs：4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id：2.5V @ 250µA, 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.4nC @ 4.5V, 7.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：41pF @ 25V, 443pF @ 16V
- Power - Max：580mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC67D8UFDBQ-13 is a complementary pair enhancement mode MOSFET from Diodes Incorporated, designed for automotive applications and qualified to AEC-Q101 standards. It integrates an N-channel device (Q1) with a drain-source voltage of 60V and a maximum continuous drain current of 0.39A at 25°C, alongside a P-channel device (Q2) rated at -20V and -2.9A. The N-channel exhibits a maximum on-resistance of 4.0Ω at VGS=10V, while the P-channel achieves 72mΩ at VGS=-4.5V. Housed in a U-DFN2020-6 Type B package with a maximum height of 0.6mm, it supports a junction temperature range of -55°C to +150°C.
Feature Summary
- Complementary N-channel and P-channel configuration optimized for load switch applications
- Low profile construction with a maximum height of 0.6mm
- ESD protected gate structure for enhanced reliability
- Qualified to AEC-Q101 standards with PPAP capability
Applications
- Automotive load switches
- Power management circuits requiring low on-resistance
- High-reliability electronic systems
Procurement Notes
Verify component authenticity by checking the marking code against official documentation. Confirm the ordering suffix matches the required tape and reel quantity. Ensure compliance with RoHS and halogen-free requirements as specified in the datasheet notes. Validate that the supplier provides traceable documentation for automotive-grade parts.
Selection Notes
Select this component when a compact complementary MOSFET pair is needed for automotive environments. Consider the specific voltage ratings of 60V for the N-channel and -20V for the P-channel. Evaluate thermal performance based on the required power dissipation and PCB copper area. Verify that the low input capacitance meets switching speed requirements.
Part Context
This part belongs to the DMC67 series of complementary MOSFETs manufactured by Diodes Incorporated. It is specifically engineered to meet automotive quality standards, distinguishing it from general-purpose discrete transistors. The U-DFN2020-6 package allows for space-constrained designs while maintaining robust electrical characteristics suitable for demanding applications.
Replacement Considerations
Check for direct replacements within the same family or similar packages. Verify pinout compatibility and electrical parameters such as RDS(ON) and breakdown voltages. Ensure any substitute also meets AEC-Q101 qualification if used in automotive contexts.
