DMF2837-000

RF Diode Overview

The DMF2837-000 is a beam-lead silicon Schottky barrier mixer diode configured as an anti-parallel pair. Designed for K and Ka band applications (18.0 to 40.0 GHz), it features low forward voltage characteristics suitable for starved local oscillator drive levels. The device exhibits a maximum junction capacitance of 0.1 pF at 0 V bias and a series resistance of 18 Ω at 5 mA. It operates within a temperature range of -65°C to +175°C with a continuous wave power dissipation rating of 75 mW per junction.

RF Diode Feature Summary

• Beam-lead design reduces bonding challenges associated with low capacitance junctions
• Anti-parallel configuration provides uniformity suited for balanced mixer circuits
• Statistical process control wafer fabrication ensures close impedance control

RF Diode Applications

• Microwave Integrated Circuits (MICs)
• K and Ka band mixers
• Detectors and modulators

RF Diode Procurement Notes

Verify the specific ordering suffix against official Skyworks documentation to confirm package type and electrical tolerances. Confirm RoHS compliance status and lead-free material specifications prior to procurement. Ensure ESD protection protocols are strictly followed during handling due to device sensitivity.

RF Diode Selection Notes

Select this component for high-frequency designs requiring low parasitic inductance and capacitance. The anti-parallel arrangement is optimal for double-balanced mixer topologies. Evaluate local oscillator drive requirements, as the low forward voltage specification targets starved drive applications effectively.

RF Diode Part Context

This part belongs to the DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes. The DMF prefix specifically denotes N-type devices with low forward voltage characteristics intended for low or starved local oscillator drive scenarios across S through Ka frequency bands.

RF Diode Replacement Considerations

DMF2835-000: S/C Band Anti-Parallel Pair

RF Diode FAQ

What is the maximum operating frequency for the DMF2837-000?

The device is designed for applications up to 40.0 GHz, covering the K and Ka bands.

How does the beam-lead design benefit this component?

The beam-lead structure eliminates bonding difficulties to small junction areas, reducing parasitics and ensuring uniform performance for impedance control.

What is the typical junction capacitance value?

The maximum junction capacitance is specified as 0.1 pF measured at 0 V bias and 1 MHz.