ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 1.03A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.03A (Ta)
- Rds On (Max) @ Id, Vgs：750mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.622nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：59pF @ 16V
- Power - Max：530mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：Automotive
- Qualification：AEC-Q101
Download product information
Overview
The DMG1023UVQ-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source voltage (BVDSS) and a maximum continuous drain current of -1.03A at +25°C. The device exhibits a low on-resistance (RDS(on)) of 0.75Ω max at VGS = -4.5V and ID = -430mA, or 1.05Ω max at VGS = -2.5V and ID = -300mA. Total gate charge (Qg) is typically 622pC at VGS = -4.5V. It operates within a temperature range of -55°C to +150°C and is housed in an SOT563 package.
Feature Summary
- Dual P-channel configuration with low on-resistance for high-efficiency power management
- Low gate threshold voltage and low input capacitance for fast switching performance
- ESD protected gate structure
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- DC-DC Converters
- Load Switch
- Power Management Functions
Procurement Notes
Verify the ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format specified in the official datasheet. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive applications requiring specific change control. Ensure the procurement channel provides traceability documentation consistent with IATF 16949 certified manufacturing facilities.
Selection Notes
Select this component when a compact dual P-channel solution is required for space-constrained designs. The SOT563 package offers a small footprint suitable for dense PCB layouts. Consider the thermal resistance of 235 °C/W and the need for adequate copper pad layout on FR-4 substrates to manage power dissipation effectively under steady-state conditions.
Part Context
The DMG1023UVQ belongs to the DMG series of dual P-channel MOSFETs from Diodes Incorporated. This series is engineered to minimize on-state resistance while maintaining superior switching characteristics. The UVQ variant specifically denotes the SOT563 package configuration, distinguishing it from other package types within the broader product family.
Replacement Considerations
The DMG1023UVQ-7 is a direct substitute offering identical electrical specifications but packaged in a 3,000-unit tape and reel instead of 10,000 units.
