DMG4N60SK3-13

$0.87

Description：MOSFET N-CH 600V 3.7A TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f242d4ae10a9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMG4N60SK3-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 600V 3.7A TO252 T&R. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG4N60SK3-13

Description：MOSFET N-CH 600V 3.7A TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.3 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：532 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：48W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for DMG4N60SK3-13

DMG4N60SK3-13

Single FETs, MOSFETs Overview

The DMG4N60SK3-13 is a 600V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 650V at the maximum junction temperature and a static drain-source on-resistance of 2.3Ω at VGS = 10V. The device supports a continuous drain current of 3.7A at TC = +25°C and 2.4A at TC = +100°C. It utilizes a TO252 package with a total power dissipation rating of 48W at TC = +25°C. The component operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
Verified through 100% Unclamped Inductive Switch (UIS) testing during production.
Constructed using lead-free, halogen-free, and antimony-free materials compliant with RoHS directives.

Single FETs, MOSFETs Applications

Motor Control
Backlighting
DC-DC Converters
Power Management Functions

Single FETs, MOSFETs Procurement Notes

Verify compliance with specific environmental standards such as RoHS 2 and RoHS 3 before procurement. Confirm that the TO252 tape and reel packaging meets storage and handling requirements. Ensure design alignment with the manufacturer's recommended replacement parts due to the product status. Validate thermal management capabilities against the specified junction-to-case thermal resistance values.

Single FETs, MOSFETs Selection Notes

Select this component for circuits requiring high-voltage blocking capability up to 600V. Evaluate the 2.3Ω on-resistance against load current requirements to ensure acceptable conduction losses. Consider the 3.7A continuous current limit when designing for steady-state operation at elevated temperatures. Verify gate drive voltage compatibility with the specified threshold characteristics.

Single FETs, MOSFETs Part Context

This part belongs to the DMG4N60SK3 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is housed in a standard TO252 surface-mount package designed for efficient heat dissipation. The device represents a generation focused on balancing low on-resistance with robust switching characteristics for industrial and consumer electronics.