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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 3.4A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.4A, 2.8A
- Rds On (Max) @ Id, Vgs：60mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：400pF @ 15V
- Power - Max：840mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：-
- Qualification：-
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Overview
The DMG6602SVT is a complementary pair enhancement mode MOSFET in a TSOT26 package, containing an N-channel Q1 and P-channel Q2. Q1 offers a 30V drain-source voltage with on-resistance of 60mΩ at VGS=10V (ID=3.4A) and 100mΩ at VGS=4.5V (ID=2.7A). Q2 provides -30V breakdown with 95mΩ at VGS=-10V (ID=-2.8A) and 140mΩ at VGS=-4.5V (ID=-2.3A). The device supports continuous currents up to 3.4A for Q1 and 2.8A for Q2 at +25°C, with pulsed capabilities of 25A and 20A respectively. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Complementary N-Channel and P-Channel MOSFET configuration
- Low on-state resistance for high efficiency
- Fast switching speed with low input capacitance
- Qualified to AEC-Q101 automotive standards
Applications
- Backlighting circuits
- DC-DC converters
- Power management functions
Procurement Notes
Verify component authenticity through authorized Diodes Incorporated distributors or direct channels. Confirm the part number matches DMG6602SVT-7 for tape and reel packaging. Check for RoHS compliance and lead-free status as specified in the datasheet notes. Ensure storage conditions adhere to moisture sensitivity level 1 requirements to prevent package damage during soldering processes.
Selection Notes
Select this component for applications requiring a compact complementary MOSFET pair in a TSOT26 footprint. Evaluate thermal performance based on the specific PCB copper area and ambient temperature conditions. Consider the gate threshold voltage and drive voltage levels to ensure optimal RDS(on) performance for both N-channel and P-channel devices in the target circuit design.
Part Context
This component is identified as not recommended for new design by the manufacturer. The datasheet explicitly recommends using the DMC3071LVT as a replacement. This status indicates that while the part remains functional for existing designs, it is no longer the preferred choice for new product development due to potential availability or updated technology alternatives.
Replacement Considerations
The official replacement specified in the datasheet is the DMC3071LVT. Verify pin compatibility and electrical parameters against the original design requirements before substitution. Ensure the alternative component meets the same package size and thermal characteristics if space constraints are critical.
