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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 9.5A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：9.5A
- Rds On (Max) @ Id, Vgs：16mOhm @ 9.4A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1149pF @ 10V
- Power - Max：1.28W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The DMG6898LSDQ-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 9.5A at +25°C. The device offers a typical static drain-source on-resistance (Rds(on)) of 11mΩ at Vgs=4.5V and Id=9.4A, with a maximum of 16mΩ under the same conditions. At Vgs=2.5V, Rds(on) is typically 17mΩ and maximally 23mΩ at Id=8.3A. Total gate charge (Qg) is 26nC at Vgs=10V. Power dissipation is rated at 1.28W, with an operating temperature range from -55°C to +150°C.
Feature Summary
- Qualified to AEC-Q101 standards for automotive applications with PPAP capability.
- Includes 100% unclamped inductive switching (UIS) testing during production.
- ESD protected up to 2kV.
- Totally lead-free, fully RoHS compliant, and halogen/antimony free.
Applications
- Backlighting
- Power management functions
- DC-DC converters
Procurement Notes
Verify that the specific ordering suffix Q-13 corresponds to the Automotive qualification level as defined in the manufacturer's datasheet. Confirm compliance with IATF 16949 certified facility manufacturing requirements if strict automotive change control protocols are necessary for the intended deployment.
Selection Notes
Select this component when a dual N-channel configuration is required within a compact SO-8 package. Ensure the application operates within the 20V drain-source voltage limit and accounts for thermal resistance characteristics. Verify that the gate drive voltage meets the minimum thresholds for optimal on-resistance performance.
Part Context
This part belongs to the DMG6898 series of dual N-channel MOSFETs produced by Diodes Incorporated. The 'Q' designation specifically denotes the automotive-grade variant, which undergoes additional qualification processes compared to commercial versions. It shares the same electrical specifications but adheres to stricter reliability standards.
Replacement Considerations
The DMG6898LSD-13 serves as the commercial equivalent with identical electrical parameters but lacks the automotive-specific qualification. No other direct substitutes are confirmed in the provided documentation.
FAQ
Is the DMG6898LSDQ-13 suitable for high-voltage applications?
No, the maximum drain-source voltage (Vdss) is limited to 20V, making it unsuitable for higher voltage circuits.
What is the maximum power dissipation rating?
The maximum power dissipation (Pd) is 1.28W at an ambient temperature of +25°C.
Does the device support unclamped inductive switching?
Yes, the datasheet confirms that 100% of units undergo unclamped inductive switching (UIS) testing during production.
