DMG7408SFG-7

$0.41

Description：MOSFET N-CH 30V 7A POWERDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT)

SKU:83bae1ecb5ef Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMG7408SFG-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 7A POWERDI3333-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG7408SFG-7

Description：MOSFET N-CH 30V 7A POWERDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：23mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：478.9 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for DMG7408SFG-7

DMG7408SFG-7

Single FETs, MOSFETs Overview

The DMG7408SFG-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum continuous drain current of 7.0A at 25°C with an on-resistance of 23mΩ at VGS=10V. It utilizes the PowerDI3333-8 surface-mount package, which offers high thermal efficiency and occupies significantly less board area than traditional SO-8 packages.

Single FETs, MOSFETs Feature Summary

Designed for high-efficiency power management applications through minimized on-state resistance and superior switching performance.
Utilizes a small form factor thermally efficient package that enables higher density end products while occupying only 33% of the board area compared to SO-8.
Qualified to AEC-Q101 standards for high reliability and tested for 100% unclamped inductive switching (UIS) capability.

Single FETs, MOSFETs Applications

Backlighting
Power Management Functions
DC-DC Converters

Single FETs, MOSFETs Procurement Notes

Verify component authenticity against official Diodes Incorporated documentation before integration. Confirm compliance with RoHS 2 and REACH directives as specified in the datasheet. Ensure proper handling procedures are followed due to moisture sensitivity level 1 classification. Validate that the PowerDI3333-8 footprint matches the suggested pad layout provided in the manufacturer's package outline specifications.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low on-resistance and compact packaging. Evaluate thermal resistance characteristics based on specific PCB copper plate dimensions. Consider gate threshold voltage variations across the operating temperature range when designing drive circuits. Verify compatibility with system voltage levels given the 30V drain-source rating.

Single FETs, MOSFETs Part Context

This part belongs to the DMG7408 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is specifically engineered to balance low conduction losses with fast switching speeds. The product is housed in the proprietary PowerDI package family, designed to optimize thermal dissipation and reduce physical footprint in modern electronic assemblies.

Single FETs, MOSFETs Replacement Considerations

The datasheet explicitly states that this component is not recommended for new designs. Engineers should utilize the DMN3025SFV as the designated replacement part number for future implementations.