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DMG7702SFG-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 12A POWERDI3333. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMG7702SFG-13
- Description：MOSFET N-CH 30V 12A POWERDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4310 pF @ 15 V
- FET Feature：Schottky Diode (Body)
- Power Dissipation (Max)：890mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
Single FETs, MOSFETs datasheet and documents for DMG7702SFG-13
Single FETs, MOSFETs Overview
The DMG7702SFG-13 is a 30V N-channel enhancement mode MOSFET with an integrated Schottky diode, manufactured by Diodes Incorporated. It utilizes DIOFET technology to minimize on-state resistance and switching losses. The device features a drain-source breakdown voltage of 30V, a continuous drain current of 9.5A at +70°C, and a maximum on-resistance of 15mΩ at VGS=4.5V. It operates within a temperature range of -55°C to +150°C and is housed in a PowerDI3333-8 package.
Single FETs, MOSFETs Feature Summary
- DIOFET technology monolithically integrates a MOSFET and a Schottky diode to reduce conduction and switching losses.
- Low gate capacitance ratio minimizes the risk of shoot-through or cross-conduction currents during high-frequency operation.
- PowerDI3333-8 package occupies significantly less board area compared to SO-8 packages while providing thermal efficiency.
Single FETs, MOSFETs Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized channels. Confirm compliance with RoHS and AEC-Q101 standards as specified in official documentation. Review datasheet revision history for updates. Ensure storage conditions meet moisture sensitivity level requirements. Validate pin configuration against schematic diagrams prior to integration.
Single FETs, MOSFETs Selection Notes
Evaluate thermal performance based on specific PCB copper area and ambient temperature conditions. Consider the integrated Schottky diode characteristics for synchronous rectification applications. Assess gate charge requirements relative to driver capabilities. Verify that the 30V rating provides sufficient margin for the target circuit's peak voltage transients.
Single FETs, MOSFETs Part Context
This component belongs to the DMG7702 series from Diodes Incorporated. It is designed for high-efficiency power management applications requiring compact form factors. The device combines standard MOSFET functionality with body diode replacement capabilities to enhance system reliability and reduce overall component count in power circuits.
Single FETs, MOSFETs Replacement Considerations
The datasheet explicitly states 'NOT RECOMMENDED FOR NEW DESIGN' and 'NO ALTERNATE PART'. No public substitute part numbers are confirmed for this specific component.
Single FETs, MOSFETs FAQ
What is the purpose of the integrated Schottky diode?
The integrated Schottky diode reduces losses due to body diode conduction and lowers reverse recovery charge (Qrr), thereby minimizing switching losses.
How does the DIOFET process benefit high-frequency applications?
It provides a low gate capacitance (Qg/Qgs) ratio, which reduces the risk of shoot-through or cross-conduction currents when operating at high frequencies.
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