DMG8822UTS-13

Overview

The DMG8822UTS-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSSOP-8L package with a drain-source voltage (VDSS) of 20V and a gate-source voltage (VGSS) rating of ±8V. The device supports a continuous drain current (ID) of 4.9A at 25°C, reducing to 3.9A at 70°C, with a pulsed drain current (IDM) capability of 31A. Key electrical parameters include a maximum static drain-source on-resistance (RDS(on)) of 37mΩ at VGS=2.5V and ID=3.3A, and a total gate charge (Qg) of 9.6nC. Thermal characteristics specify a power dissipation (PD) of 0.87W and a junction-to-ambient thermal resistance (RθJA) of 143°C/W. Operating and storage temperatures range from -55°C to +150°C.

Feature Summary

• Dual N-channel configuration in a compact TSSOP-8L surface-mount package
• Low on-resistance for efficient power handling
• Fast switching speed with low input capacitance
• Qualified to AEC-Q101 standards for high reliability

Applications

• Power management circuits requiring dual channel control
• DC-DC converter topologies
• Load switching applications

Procurement Notes

Verify the component authenticity through authorized Diodes Incorporated distribution channels. Confirm that the specific ordering suffix '-13' corresponds to the tape and reel packaging format containing 2500 units per reel as documented in the official datasheet. Ensure compliance with RoHS directives and lead-free design requirements specified by the manufacturer.

Selection Notes

Select this component when a dual N-channel MOSFET with a 20V breakdown voltage is required in a TSSOP-8L footprint. Evaluate the RDS(on) specifications against the intended load current and gate drive voltage levels. Consider the thermal resistance and power dissipation limits relative to the PCB layout and ambient operating conditions to ensure reliable performance within the specified temperature range.

Part Context

This part belongs to the DMG8822 series of dual N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series is designed for general-purpose switching applications where space efficiency and low on-resistance are prioritized. The 'UTS' designation indicates the specific TSSOP-8L package variant, while the '-13' suffix denotes the standard tape and reel packaging configuration.

Replacement Considerations

Consult the official Diodes Incorporated documentation for verified substitute part numbers. Cross-reference pin configurations, electrical ratings, and package dimensions before implementation.

FAQ

What is the maximum pulsed drain current for the DMG8822UTS-13?

The maximum pulsed drain current (IDM) is 31A, limited by the repetitive rating and pulse width constrained by junction temperature.

How does the continuous drain current change with temperature?

The continuous drain current is 4.9A at an ambient temperature of 25°C and decreases to 3.9A at an ambient temperature of 70°C.

Is the DMG8822UTS-13 suitable for automotive applications?

Yes, the device is qualified to AEC-Q101 standards for high reliability, making it suitable for automotive environments.