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DMG9N65CTI is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 650V 9A ITO220AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMG9N65CTI
- Description：MOSFET N-CH 650V 9A ITO220AB
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.3Ohm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：39 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：2310 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：13W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：ITO-220AB
- Package / Case：TO-220-3 Full Pack, Isolated Tab
Single FETs, MOSFETs datasheet and documents for DMG9N65CTI
Single FETs, MOSFETs Overview
The DMG9N65CTI is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V(BR)DSS) of 650V and a continuous drain current (ID) of 9.0A at TC = +25°C. The device exhibits a maximum static drain-source on-resistance (RDS(ON)) of 1.3Ω at VGS = 10V and ID = 4.5A. It operates within a junction temperature range of -55°C to +150°C and utilizes an ITO-220AB package.
Single FETs, MOSFETs Feature Summary
- High breakdown voltage rating suitable for demanding power applications
- Low input capacitance supporting fast switching performance
- Qualified to AEC-Q101 standards for high reliability requirements
Single FETs, MOSFETs Applications
- Motor Control
- Backlighting
- DC-DC Converters
- Power Management Functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix 'I' against the manufacturer's official documentation to confirm packaging details, as datasheets may list variations such as tube quantities. Ensure compliance with RoHS directives and confirm halogen-free status if required by project specifications before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring high-voltage handling capabilities up to 650V. Consider the thermal resistance characteristics and package limitations for heat dissipation in steady-state operations. Evaluate gate threshold voltage requirements to ensure compatibility with available drive voltages for optimal conduction efficiency.
Single FETs, MOSFETs Part Context
This part belongs to the DMG9N65 series from Diodes Incorporated. It represents a generation of complementary dual MOSFETs designed for low on-resistance and fast switching. The ITO-220AB case provides a robust mechanical structure for through-hole mounting in industrial and consumer electronics environments.
Single FETs, MOSFETs Replacement Considerations
Consult the manufacturer's official cross-reference lists or equivalent product guides for verified substitutes. Verify that any alternative component matches the 650V rating, 9.0A current capacity, and ITO-220AB footprint to maintain circuit integrity.
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