DMHC3025LSD-13

Overview

The DMHC3025LSD-13 is a complementary enhancement mode MOSFET H-Bridge featuring two N-channel and two P-channel devices within an SO-8 package. The N-channel section provides a drain-source breakdown voltage of 30V, with a maximum on-resistance of 25mΩ at VGS=10V and 40mΩ at VGS=4.5V. Continuous drain current reaches 6.0A at VGS=10V and 4.6A at VGS=4.5V. The P-channel section offers a -30V breakdown voltage, with on-resistance values of 50mΩ at VGS=-10V and 80mΩ at VGS=-4.5V. Maximum continuous drain currents are -4.2A and -3.2A respectively. Total power dissipation is rated at 1.5W.

Feature Summary

• Integrates two N-channel and two P-channel transistors in a single SO-8 package for compact H-bridge designs
• Achieves low on-resistance suitable for low gate drive applications
• Features low input capacitance and fast switching speed characteristics
• Qualified to AEC-Q101 standards for high reliability automotive applications

Applications

• DC Motor Control
• DC-AC Inverters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2500 units per reel. Confirm that the component meets RoHS directives and is halogen-free if environmental compliance is required for the assembly process. Ensure the manufacturing source matches Diodes Incorporated specifications.

Selection Notes

Select this component when a matched complementary pair is needed for H-bridge topologies requiring low gate drive voltages. Verify that the 30V breakdown voltage aligns with the system supply rails. Consider the thermal resistance of 83°C/W for ambient cooling requirements and ensure the SO-8 footprint fits the PCB layout constraints.

Part Context

This part belongs to the DMHC series of complementary MOSFETs manufactured by Diodes Incorporated. It serves as a specialized solution for driving loads in bridge configurations without requiring separate discrete N-channel and P-channel components. The device is designed to simplify circuit design while maintaining efficient power handling capabilities.

Replacement Considerations

The datasheet notes that an automotive-compliant version is available under the separate part number DMHC3025LSDQ. Verify pinout compatibility and electrical parameter tolerances before substituting with other complementary MOSFET pairs from different manufacturers.

FAQ

What is the maximum pulsed drain current for the N-channel section?

The maximum pulsed drain current (IDM) for the N-channel section is 60A, based on a 10μs pulse duration with a 1% duty cycle.

Does the device include body diodes?

Yes, the device includes internal body diodes. The maximum continuous body diode forward current (IS) is specified as 2.5A for both N-channel and P-channel sections.

What is the typical total gate charge for the N-channel at VGS=10V?

The typical total gate charge (Qg) for the N-channel section at VGS=10V is 11.7nC, measured at VDS=15V and ID=7.8A.