DMHT10H032LFJ-13

Overview

The DMHT10H032LFJ-13 is a complementary N-channel enhancement mode MOSFET H-Bridge manufactured by Diodes Incorporated. It features a VDS of 100V and a maximum RDS(ON) of 33mΩ at VGS=10V with an ID of 6A. At VGS=4.5V, the RDS(ON) is 50mΩ with an ID of 5A. The device operates within a junction temperature range of -55°C to +150°C. Total power dissipation is 0.9W on FR-4 with minimum pads, or 1.9W with thermal bias. It utilizes a V-DFN5045-12 (Type C) case.

Feature Summary

• Thermally efficient package design for cooler running applications
• High conversion efficiency with low input capacitance
• Minimized on-state losses through low RDS(ON)
• Fast switching speed capabilities
• 100% unclamped inductive switching (UIS) tested in production

Applications

• Motor Control
• DC-DC Converters
• Power Management

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000 units per tape and reel packaging configuration. Confirm that the component meets RoHS 3 compliance standards and is halogen and antimony free. Ensure the procurement channel provides original manufacturer documentation to validate authenticity and traceability.

Selection Notes

Select this component for designs requiring a compact H-Bridge solution with low gate drive requirements. Evaluate the thermal resistance characteristics against the expected duty cycle and ambient temperature conditions. Consider the 100V breakdown voltage and 6A continuous current limits when sizing the circuit for motor or converter loads.

Part Context

This part belongs to the DMHT10 series of complementary MOSFET H-Bridges from Diodes Incorporated. It is designed to provide low on-resistance achievable with low gate drive, making it suitable for automotive and industrial power management applications where space and efficiency are critical constraints.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.