DMJ7N70SK3-13

$1.79

Description：MOSFET N-CH 700V 3.9A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:712704871e44 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

DMJ7N70SK3-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 700V 3.9A TO252. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMJ7N70SK3-13

Description：MOSFET N-CH 700V 3.9A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：700 V
Current - Continuous Drain (Id) @ 25°C：3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.25Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.9 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：351 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：28W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for DMJ7N70SK3-13

DMJ7N70SK3-13

Single FETs, MOSFETs Overview

The DMJ7N70SK3-13 is a 700V N-channel enhancement mode MOSFET in a TO252 (DPAK) package. It features a maximum continuous drain current of 3.9A at 25°C case temperature and a static drain-source on-resistance of 1.25Ω max at VGS=10V. The device supports a gate-source voltage of ±30V, total power dissipation of 28W at 25°C, and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Designed for high-efficiency power management applications with minimized on-state resistance and superior switching performance.
Verified for 100% Unclamped Inductive Switching (UIS) capability during production testing.

Single FETs, MOSFETs Applications

High-efficiency power management systems
General-purpose switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the standard tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets RoHS directives and is halogen and antimony free as defined by the manufacturer's green product standards. Ensure the procurement channel is authorized to guarantee compliance with the life support usage restrictions outlined in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when a 700V breakdown voltage is required for high-voltage switching applications. The TO252 package provides a balance of thermal performance and surface mount convenience. Consider the 1.25Ω on-resistance and 3.9A current rating to ensure adequate headroom for the intended load conditions and thermal environment.

Single FETs, MOSFETs Part Context

This part belongs to the DMJ7N70SK3 series from Diodes Incorporated. It is an N-channel enhancement mode MOSFET designed to minimize on-state resistance while maintaining switching performance. The device utilizes a molded plastic case with matte tin annealed terminals over a copper leadframe, classified under UL flammability rating 94V-0.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

Single FETs, MOSFETs FAQ

Is the DMJ7N70SK3-13 suitable for use in life support devices?

No. Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without express written approval from the Chief Executive Officer.