DMN1019USN-7

$0.45

Description：MOSFET N-CH 12V 9.3A SC59
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ed93e2ad3bc2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN1019USN-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 12V 9.3A SC59. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN1019USN-7

Description：MOSFET N-CH 12V 9.3A SC59
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：9.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.2V, 2.5V
Rds On (Max) @ Id, Vgs：10mOhm @ 9.7A, 4.5V
Vgs(th) (Max) @ Id：800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：50.6 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：2426 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：680mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SC-59-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for DMN1019USN-7

DMN1019USN-7

Single FETs, MOSFETs Overview

The DMN1019USN-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 12V and a continuous drain current of 9.3A at 25°C. The device exhibits a typical on-resistance of 10mΩ at VGS=4.5V. Electrical characteristics include a gate threshold voltage of 0.35V to 0.8V, total gate charge of 27.3nC at VGS=4.5V, and input capacitance of 2426pF. Thermal performance specifies a junction-to-case resistance of 18°C/W. Operating temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Designed for high efficiency power management applications with minimized on-state resistance.
Features an integrated ESD protected gate structure.
Qualified to AEC-Q101 standards for automotive reliability.
Compliant with RoHS directives and halogen/antimony-free green manufacturing.

Single FETs, MOSFETs Applications

Load Switch
DC-DC Converters
Power Management Functions

Single FETs, MOSFETs Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS36999 Rev. 2-2. Confirm that the SC59 package matches the required footprint dimensions. Ensure the ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging format specified in the manufacturer's documentation.

Single FETs, MOSFETs Selection Notes

Select this component when low on-resistance is critical for high-efficiency power management. The 12V rating suits low-voltage systems. Verify that the 9.3A continuous current capability meets the load requirements. Consider the thermal resistance values if operating near maximum junction temperatures.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes the SC59 surface-mount case configuration. The product line emphasizes superior switching performance combined with low static drain-source on-resistance.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer's documentation for officially confirmed substitute part numbers. Cross-referencing requires matching electrical parameters and physical package dimensions.