DMN1021UCA4-7

$0.09

Description：MOSFET BVDSS: 8V~24V X2-TSN0808-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:7fd288ed8ec5 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN1021UCA4-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V X2-TSN0808-. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN1021UCA4-7

Description：MOSFET BVDSS: 8V~24V X2-TSN0808-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：7.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：21mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.1 nC @ 4 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：409 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：690mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-TSN0808-4
Package / Case：4-XFDFN

Single FETs, MOSFETs datasheet and documents for DMN1021UCA4-7

DMN1021UCA4-7

Single FETs, MOSFETs Overview

The DMN1021UCA4-7 is an N-channel enhancement mode MOSFET designed for high-efficiency power management. It features a maximum drain-source voltage (VDS) of 12 V and a typical on-resistance (RDS(ON)) of 20 mΩ at VGS = 2.5 V. The device supports a continuous drain current (ID) of 7.4 A at TA = +25°C with VGS = 4.5 V, or 6.4 A at VGS = 2.5 V. It operates within a junction temperature range of -55°C to +150°C and utilizes an X2-TSN0808-4 package.

Single FETs, MOSFETs Feature Summary

Ultra-low profile CSP footprint measuring 0.76mm x 0.76mm with a typical height of 0.275mm
Totally lead-free and fully RoHS compliant construction
Halogen and antimony free "Green" device formulation

Single FETs, MOSFETs Applications

Battery management systems
Load switches
DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3,000 units per carrier. Confirm that the component meets the required environmental standards, specifically the halogen and antimony-free definitions provided by the manufacturer. Ensure the selected part aligns with the intended application's thermal and electrical requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a compact surface-mount solution is required for low-voltage switching applications. The device offers a balance of low on-resistance and fast switching performance suitable for space-constrained designs. Consider the thermal resistance characteristics and the specific gate drive voltage levels available in the target circuit to ensure optimal conduction efficiency.

Single FETs, MOSFETs Part Context

This component belongs to Diodes Incorporated's MOSFET product line, categorized under discrete semiconductors and transistors. It is manufactured using silicon technology and is designed to minimize on-state resistance while maintaining superior switching capabilities. The part is intended for use in modern electronic circuits requiring efficient power handling in small form factors.