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DMN1023UCB4-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N CH 5.1A U-WLB1010-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN1023UCB4-7
- Description：MOSFET N CH 5.1A U-WLB1010-4
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：-
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：5.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：23mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.3 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：288 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-WLB1010-4 (Type C)
- Package / Case：4-UFBGA, WLBGA
Single FETs, MOSFETs datasheet and documents for DMN1023UCB4-7
Single FETs, MOSFETs Overview
The DMN1023UCB4-7 is an N-channel MOSFET manufactured by Diodes Incorporated, designed for surface-mount applications. It features a drain-to-source voltage (Vds) of 12 V and a continuous drain current (Id) of 5.1 A at ambient temperature. The device offers low on-resistance characteristics with drive voltages optimized at 1.8 V and 4.5 V. It utilizes the U-WLB1010-4 (Type C) package configuration.
Single FETs, MOSFETs Feature Summary
- N-channel enhancement mode field-effect transistor architecture
- Optimized gate drive performance for low-voltage logic interfaces
- Compact surface-mount footprint for high-density board layouts
Single FETs, MOSFETs Applications
- Portable electronic devices requiring efficient power switching
- Low-voltage DC-DC converter circuits
- Battery-powered equipment load management
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix designation to ensure compatibility with required packaging formats. Confirm that the component meets all relevant environmental compliance standards for the intended deployment region. Cross-reference the datasheet electrical limits against the target circuit operating conditions to prevent overstress scenarios during procurement validation.
Single FETs, MOSFETs Selection Notes
Select this component when a 12 V rating and 5.1 A current capacity are required in a minimal footprint. Evaluate the thermal dissipation capabilities within the U-WLB1010-4 package relative to the system's heat sink or PCB copper area constraints. Ensure the gate threshold voltage aligns with the controlling microcontroller or driver output levels.
Single FETs, MOSFETs Part Context
This part belongs to Diodes Incorporated's portfolio of single N-channel MOSFETs. It is engineered for general-purpose switching tasks where space efficiency and conduction losses are critical design parameters. The device integrates standard silicon technology optimized for modern consumer and industrial electronics supply chains.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before integrating any substitute components into existing designs.
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