DMN10H099SFG-7

$0.74

Description：MOSFET N-CH 100V 4.2A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5e0a0e00f8b6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN10H099SFG-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 4.2A PWRDI3333. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN10H099SFG-7

Description：MOSFET N-CH 100V 4.2A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：80mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1172 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：980mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for DMN10H099SFG-7

DMN10H099SFG-7

Single FETs, MOSFETs Overview

The DMN10H099SFG-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 100V and a continuous drain current of 4.2A at +25°C. The device offers a typical static drain-source on-resistance of 54mΩ at VGS=10V and 58mΩ at VGS=6.0V. Total gate charge is specified at 25.2nC at VGS=10V. Operating temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low RDS(ON) minimizes on-state power losses
Small form factor thermally efficient package enables higher density end products
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
Qualified to AEC-Q101 Standards for High Reliability

Single FETs, MOSFETs Applications

Power Management Functions
DC-DC Converters

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized channels. Confirm RoHS compliance and lead-free status against latest datasheet revisions. Ensure storage conditions respect moisture sensitivity level 1 per J-STD-020 standards. Validate solderability requirements using MIL-STD-202, Method 208 specifications before assembly.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency power management applications requiring low on-state resistance and fast switching performance. Consider thermal resistance values when designing heat dissipation strategies. Evaluate gate threshold voltage compatibility with control logic levels. Assess package dimensions against available PCB real estate constraints.

Single FETs, MOSFETs Part Context

This part belongs to the DMN10 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the POWERDI3333-8 package, which provides a compact footprint compared to traditional SO-8 packages. The series is designed for applications demanding minimized on-state losses while maintaining superior switching characteristics in power management circuits.