DMN10H220LDV-7

Overview

The DMN10H220LDV-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI3333-8 (Type UXC) surface-mount package. The device provides a drain-source voltage rating of 100 V and a continuous drain current of 10.5 A at +25°C case temperature. Maximum on-resistance is specified as 222 mΩ at VGS = 10 V and 270 mΩ at VGS = 4.5 V. Total gate charge is 6.7 nC at VGS = 10 V. Thermal resistance from junction to ambient is 70 °C/W, while junction-to-case resistance is 3.12 °C/W. Operating temperature range spans -55°C to +150°C.

Feature Summary

• Dual configuration with two independent N-channel enhancement mode transistors in a single compact package.
• Optimized for low on-state resistance to support high-efficiency power management applications.
• Validated for superior switching performance with fast turn-on and turn-off characteristics.
• Manufactured using lead-free, halogen-free, and antimony-free materials compliant with RoHS directives.

Applications

• Load switching circuits
• High-efficiency power management systems

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The DMN10H220LDV-7 variant is supplied in tape and reel format with a quantity of 2000 units per reel. Confirm that the component meets all required environmental standards and automotive qualification criteria if applicable to the target design.

Selection Notes

Select this component when a dual N-channel MOSFET solution is required within a small footprint. Ensure the application operates within the 100 V drain-source voltage limit and respects the 10.5 A continuous current rating at the appropriate case temperature. Verify that the gate drive voltage aligns with the specified RDS(ON) thresholds for optimal conduction losses.

Part Context

This part belongs to the DMN series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the PowerDI3333-8 package type, which is designed for efficient thermal dissipation and space-constrained PCB layouts. The series focuses on balancing low static resistance with dynamic switching capabilities for modern electronic designs.

Replacement Considerations

The datasheet lists the DMN10H220LDV-13 as an equivalent part number differing only in packaging quantity (3000 units per reel). No other substitute part numbers are documented in the provided source material.

FAQ

What is the maximum avalanche energy rating for this device?

The maximum avalanche energy (EAS) is rated at 1.1 mJ based on a test condition of L = 0.1 mH.

Does the DMN10H220LDV-7 include internal body diodes?

Yes, the device includes integrated body diodes with a forward voltage (VSD) of typically 0.8 V at IS = 2 A.

Is this component suitable for automotive applications?

For automotive applications requiring specific change control or AEC-Q100/101/200 qualification, customers must contact Diodes Incorporated directly or their local representative.