DMN1150UFB-7B

$0.30

Description：MOSFET N-CH 12V 1.41A 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f6f096b47a60 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN1150UFB-7B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 12V 1.41A 3DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN1150UFB-7B

Description：MOSFET N-CH 12V 1.41A 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：1.41A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：150mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.5 nC @ 4.5 V
Vgs (Max)：±6V
Input Capacitance (Ciss) (Max) @ Vds：106 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X1-DFN1006-3
Package / Case：3-UFDFN

Single FETs, MOSFETs datasheet and documents for DMN1150UFB-7B

DMN1150UFB-7B

Single FETs, MOSFETs Overview

The DMN1150UFB-7B is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X1-DFN1006-3 surface-mount package. It features a drain-source breakdown voltage of 12V and a maximum continuous drain current of 1.41A at +25°C. The device exhibits low on-state resistance, specified as 150mΩ at VGS=4.5V and ID=1A, or 210mΩ at VGS=1.8V. Total gate charge is typically 1.5nC. Operating temperature ranges from -55°C to +150°C, with total power dissipation rated at 0.5W.

Single FETs, MOSFETs Feature Summary

Designed for high efficiency power management applications by minimizing on-state resistance while maintaining superior switching performance.
Features very low gate threshold voltage (maximum 1.0V) and low input capacitance for fast switching speed.
Includes ESD protected gate structure and is qualified to AEC-Q101 standards for high reliability.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.

Single FETs, MOSFETs Applications

DC-DC Converters
Power management functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7B' against official documentation to confirm packaging details, such as tape and reel quantities. Ensure that the component meets all applicable environmental compliance requirements, including RoHS and halogen-free specifications, before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage N-channel MOSFET with minimal on-resistance is required for efficient power conversion. Consider the 12V rating and 1.41A current capability alongside the compact X1-DFN1006-3 footprint. Evaluate thermal constraints based on the 0.5W power dissipation limit and junction-to-ambient thermal resistance.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is designed for surface mount installation. The device integrates an internal body diode and provides an equivalent circuit with gate protection.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-referencing requires matching key electrical parameters such as voltage ratings, current capacity, and package dimensions to ensure functional compatibility without compromising system reliability.