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Product Detailed Parameters
- Description：MOSFET 8N-CH 12V 2A U-QFN1515
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：8 N-Channel, Common Gate, Common Source
- FET Feature：-
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：2A
- Rds On (Max) @ Id, Vgs：450mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：190pF @ 6V
- Power - Max：660mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：12-UFQFN Exposed Pad
- Supplier Device Package：U-QFN1515-12
- Grade：-
- Qualification：-
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Overview
The DMN1250UFEL-7 is an N-channel enhancement mode MOSFET array from Diodes Incorporated, integrating eight independent single MOSFETs within a U-QFN1515-12 package. It features a drain-source voltage (VDSS) of 12 V and a continuous drain current (ID) of 2.0 A at +25°C. The typical on-resistance (RDS(ON)) is 280 mΩ at VGS = 4.5V and 360 mΩ at VGS = 2.5V. Total gate charge (Qg) is typically 1.3 nC. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Integrates eight common source N-channel MOSFETs into a compact 1.5mm x 1.5mm footprint.
- Provides low gate charge for efficient switching performance.
- Compliant with RoHS standards and free from halogen, antimony, and beryllium.
Applications
- Portable electronic devices requiring multiple low-voltage switching functions in limited space.
- Battery-powered equipment utilizing the integrated array for power management.
- General-purpose logic level switching applications.
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3000 units per reel. Confirm that the component meets the required environmental compliance standards, specifically RoHS directives and the manufacturer's definitions for halogen-free and lead-free materials before finalizing procurement specifications.
Selection Notes
Select this component when a design requires multiple isolated N-channel switches within a constrained board area. Ensure the application operates within the 12 V drain-source voltage limit and respects the 2.0 A continuous current rating at ambient temperatures up to +25°C. Consider the thermal resistance characteristics if operating near maximum junction temperatures.
Part Context
This device belongs to the DMN series of multi-MOSFET arrays manufactured by Diodes Incorporated. It utilizes the U-QFN1515-12 case style, which provides a small surface-mount profile suitable for high-density PCB layouts. The product is designed as a 'Green' device, adhering to strict material restrictions regarding hazardous substances.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Verify pinout compatibility and electrical parameters against alternative multi-MOSFET arrays if sourcing changes occur.
FAQ
What is the maximum continuous drain current for the DMN1250UFEL?
The maximum continuous drain current is 2.0 A at an ambient temperature of +25°C, reducing to 1.6 A at +70°C.
How many MOSFETs are contained within the DMN1250UFEL package?
The package contains eight independent N-channel enhancement mode MOSFETs configured with a common source connection.
What is the typical gate threshold voltage range?
The gate threshold voltage (VGS(TH)) has a minimum value of 0.4 V and a maximum value of 1 V, tested at ID = 250µA.
