DMN16M8UCA6-7

$0.25

Description：MOSFET 2N-CH 12V X3-DSN2718-6
Series：-

SKU:c153fa39d0ed Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 12V X3-DSN2718-6
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：-
Drain to Source Voltage (Vdss)：12V
Current - Continuous Drain (Id) @ 25°C：15.5A (Ta)
Rds On (Max) @ Id, Vgs：5.6mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id：1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：45.4nC @ 6V
Input Capacitance (Ciss) (Max) @ Vds：2333pF @ 6V
Power - Max：1.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-SMD, No Lead
Supplier Device Package：X3-DSN2718-6
Grade：-
Qualification：-

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DMN16M8UCA6-7

Overview

The DMN16M8UCA6-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes an X3-DSN2718-6 package with dimensions of 2.70mm x 1.81mm and a height of 0.21mm. The device features a source-source breakdown voltage (BVSSS) of 12V, a typical static on-resistance (RSS(ON)) of 4.3mΩ at VGS = 3.8V, and a maximum continuous source current of 15.5A at TA = +25°C. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Low profile CSP footprint measuring 2.70mm x 1.81mm with a height of 0.21mm
Integrated electrostatic discharge protection for the gate terminal
Totally lead-free and fully RoHS compliant construction

Applications

Battery management systems
Load switches
Battery protections

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3000 units per carrier. Confirm that the component meets the required environmental standards, specifically ensuring compliance with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3). Ensure the application environment does not exceed the specified thermal resistance limits.

Selection Notes

Select this component when a low-profile dual N-channel MOSFET is required for high-efficiency power management applications. The device is optimized to minimize on-state resistance while maintaining superior switching performance. Verify that the system's gate drive voltage aligns with the specified thresholds for optimal conduction characteristics.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The product line focuses on minimizing on-state resistance to support high-efficiency power management designs. The DMN16M8UCA6 variant specifically targets applications requiring compact footprints and robust electrical performance within a low-profile CSP package.