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Product Detailed Parameters
- Description：MOSFET 20V 10.3A X4-DSN1717
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：10.3A (Ta)
- Rds On (Max) @ Id, Vgs：11.9mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 640µA
- Gate Charge (Qg) (Max) @ Vgs：17.5nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds：1780pF @ 10V
- Power - Max：900mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：4-XFBGA, DSBGA
- Supplier Device Package：X4-DSN1717-4
- Grade：-
- Qualification：-
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Overview
The DMN2009UCA4-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a source-source configuration with a breakdown voltage of 20V and a typical on-resistance of 10.2mΩ at VGS=3.8V. The device supports a continuous source current of 10.3A at 25°C and operates within a temperature range of -55°C to +150°C. Packaged in an X4-DSN1717-4 footprint measuring 1.75mm x 1.75mm, it includes integrated gate ESD protection diodes.
Feature Summary
- Dual N-channel architecture with integrated gate-to-source ESD protection diodes for enhanced reliability.
- Low profile CSP package design with a typical height of 0.120mm and a compact 1.75mm x 1.75mm footprint.
- Optimized for high efficiency power management through minimized on-state resistance while maintaining superior switching performance.
Applications
- Battery management systems
- Load switches
- Battery protection circuits
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging format containing 3000 units per carrier. Confirm that the component meets RoHS 3 and halogen-free requirements if environmental compliance is mandatory for the target assembly process. Ensure the selected PCB pad layout matches the manufacturer's recommended dimensions for the X4-DSN1717-4 package to guarantee thermal and mechanical integrity.
Selection Notes
Select this component when a low-profile dual N-channel solution is required for space-constrained designs. The device is suitable for applications demanding high continuous current handling up to 10.3A with minimal conduction losses. Consider the thermal resistance characteristics and ensure adequate copper area on the PCB to manage heat dissipation effectively under steady-state operating conditions.
Part Context
This part belongs to the DMN series of MOSFETs from Diodes Incorporated, which focuses on minimizing on-state resistance for improved power efficiency. The DMN2009UCA4 utilizes advanced trench technology to achieve its electrical specifications. It is designed as a modern replacement for older discrete solutions in portable and battery-powered electronics where size and efficiency are critical constraints.
Replacement Considerations
Direct pin-compatible replacements should be sought within the same X4-DSN1717-4 package family. Verify that any substitute maintains the 20V breakdown voltage and comparable on-resistance values to ensure circuit performance remains unchanged during migration.
