DMN2013UFDE-7

Single FETs, MOSFETs Overview

The DMN2013UFDE-7 is a 20V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a U-DFN2020-6 (Type E) surface-mount package. The device features a maximum drain-source breakdown voltage of 20V and a gate-source voltage rating of ±8V. At VGS = 4.5V, the maximum on-resistance is 11mΩ with a continuous drain current of 10.5A. Lower gate voltages result in higher resistance and reduced current capacity: 13mΩ/9.4A at 2.5V, 30mΩ/6.5A at 1.8V, and 50mΩ/5.5A at 1.5V. The component operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Designed for high efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
• Features a low profile construction with a 0.6mm height and a compact PCB footprint of 4mm², suitable for space-constrained designs.
• Incorporates an ESD protected gate structure and offers a low gate threshold voltage for effective drive compatibility.

Single FETs, MOSFETs Applications

• General purpose interfacing switch
• Power management functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the required compliance level matches the standard version or the automotive-compliant variant if AEC-Q100 qualification is necessary. Ensure the selected part number aligns with the intended manufacturing facility and quality control requirements.

Single FETs, MOSFETs Selection Notes

Select this component when a low-profile N-channel MOSFET is required for 20V logic-level switching applications. Evaluate the trade-off between on-resistance and gate drive voltage based on the target load current. Verify thermal dissipation capabilities relative to the PCB copper area and ambient operating conditions to ensure junction temperatures remain within safe limits.

Single FETs, MOSFETs Part Context

This component belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It represents a generation of devices optimized for balancing low conduction losses with fast switching characteristics. The U-DFN2020-6 package provides a compact solution compared to traditional leaded packages, supporting modern automated surface-mount assembly processes.

Single FETs, MOSFETs Replacement Considerations

For automotive applications requiring specific change control, qualified parts, and IATF 16949 manufacturing, consider the DMN2013UFDEQ variant. Verify pinout compatibility and electrical parameters before substituting with other manufacturers' equivalents.