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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 9A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：9A (Ta)
- Rds On (Max) @ Id, Vgs：13mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1550pF @ 10V
- Power - Max：800mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：U-DFN2030-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMN2014LHAB-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2030-6 (Type B) surface-mount package with an operating temperature range of -55°C to +150°C. The device provides a drain-source voltage rating of 20V and a continuous drain current of 9.0A at 25°C. Maximum on-state resistance is 13mΩ at VGS = 4.5V, rising to 28mΩ at VGS = 1.8V. Total gate charge is 8.4nC at VGS = 2.5V and 16nC at VGS = 4.5V. Thermal resistance from junction to ambient is 73.7°C/W under steady-state conditions.
Feature Summary
- Dual N-channel configuration with integrated ESD protection diodes for each channel
- Optimized low on-state resistance combined with fast switching performance
- Qualified to AEC-Q101 automotive standards for high reliability applications
Applications
- Power management functions
- Battery pack circuits
- Load switch implementations
Procurement Notes
Verify the specific ordering suffix '-13' against official documentation to confirm the 10,000-unit tape and reel packaging format. Ensure that the component meets all applicable RoHS and halogen-free requirements as defined by the manufacturer's quality standards before finalizing procurement specifications.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage power management. The U-DFN2030-6 package offers a small footprint suitable for space-constrained designs. Evaluate thermal constraints carefully, as the junction-to-ambient resistance requires adequate copper pad layout for optimal heat dissipation during continuous operation.
Part Context
This part belongs to the DMN series of dual N-channel MOSFETs from Diodes Incorporated. The 'DMN2014LHAB' designation identifies the specific electrical characteristics and package type, while the '-13' suffix indicates the standard 10,000-piece tape and reel packaging option used for automated assembly processes.
Replacement Considerations
Consult the manufacturer's official documentation for verified equivalent parts. Cross-referencing should focus on matching the 20V drain-source voltage, dual N-channel topology, and U-DFN2030-6 package dimensions to ensure mechanical and electrical compatibility.
FAQ
What is the maximum gate-source voltage rating?
The absolute maximum gate-source voltage (VGSS) rating is ±12V.
How does the on-resistance vary with gate voltage?
The maximum RDS(ON) increases as the gate voltage decreases, ranging from 13mΩ at VGS=4.5V to 28mΩ at VGS=1.8V.
Is the device suitable for automotive applications?
Yes, the DMN2014LHAB is qualified to AEC-Q101 standards for high reliability in automotive environments.
