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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V 24V V-DFN3030-8
- Series：*
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-VDFN
- Supplier Device Package：V-DFN3030-8
- Grade：-
- Qualification：-
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Overview
The DMN2022UDH-13 is a dual N-channel MOSFET manufactured by Diodes Incorporated, housed in an SOT-363 surface-mount package. It features a drain-source breakdown voltage (Vds) of 20 V and a continuous drain current (Id) of 2.5 A. The device exhibits a maximum on-resistance (Rds(on)) of 48 mΩ at a gate-source voltage (Vgs) of 4.5 V. Gate threshold voltage (Vgs(th)) ranges from 0.7 V to 1.9 V, with a total gate charge (Qg) of 4.5 nC. Power dissipation is rated at 500 mW, operating within a temperature range of -55°C to +150°C.
Feature Summary
- Dual configuration integrates two independent N-channel enhancement-mode transistors into a single compact footprint for space-constrained designs.
- Low on-resistance characteristics support efficient power switching with minimal conduction losses in low-voltage applications.
- Fast switching performance facilitated by low gate charge values enables high-frequency operation suitable for modern power management circuits.
Applications
- Load switching in portable consumer electronics
- Power management units for battery-operated devices
- DC-DC converter output stages
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure that the component meets RoHS directives if required by the target assembly standards. Cross-reference the package marking codes to distinguish between different manufacturing lots or regional variants during incoming inspection processes.
Selection Notes
Select this component when a dual N-channel solution is required in an SOT-363 package with a 20 V rating. Compare the 48 mΩ Rds(on) specification against circuit load requirements to ensure thermal limits are not exceeded. Evaluate the 2.5 A current capability against peak and continuous duty cycles to validate reliability under expected operating conditions.
Part Context
This part belongs to the DMN series of dual MOSFETs from Diodes Incorporated, designed for general-purpose switching applications. The SOT-363 package provides a small outline transistor form factor suitable for automated surface-mount assembly. It serves as a complementary component to single-channel counterparts in differential or half-bridge configurations.
Replacement Considerations
Potential substitutes include other dual N-channel MOSFETs in SOT-363 packages with comparable Vds and Rds(on) ratings. Verify pin-to-pin compatibility and thermal resistance parameters before substitution. Consult the manufacturer's cross-reference guide for officially recommended alternatives.
