DMN2022UDH-7

$0.20

Description：MOSFET BVDSS: 8V 24V V-DFN3030-8
Series：*

SKU:e382a64c7fe3 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V 24V V-DFN3030-8
Series：*
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：8-VDFN
Supplier Device Package：V-DFN3030-8
Grade：-
Qualification：-

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DMN2022UDH-7

Overview

The DMN2022UDH-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an SMD/SMT package, specifically the SOT-363-6 configuration. The device features a drain-source breakdown voltage (BVDSS) range of 8V to 24V. It supports a continuous drain current of 360 mA and maintains a maximum gate-source voltage rating of ±20 V. Key electrical characteristics include a gate charge of 600 pC and a power dissipation capacity of 310 mW. The component operates within a temperature range from -55°C to +150°C.

Feature Summary

Dual N-channel enhancement mode configuration for compact circuit integration
Silicon-based construction optimized for surface-mount applications
Low gate charge specification facilitating efficient switching performance

Applications

Battery protection circuits
Power management systems
Signal switching applications

Procurement Notes

Verify the specific package variant and tape-and-reel quantity against official Diodes Incorporated documentation prior to ordering. Confirm that the requested suffix matches the required manufacturing revision. Ensure compliance with RoHS directives as specified in the product datasheet. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability.

Selection Notes

Select this component when a dual N-channel MOSFET is required for low-voltage applications with a BVDSS up to 24V. Consider the 360 mA continuous drain current limit and 310 mW power dissipation capability for thermal design. The SOT-363-6 package is suitable for space-constrained PCB layouts. Verify gate threshold voltage requirements against the driving logic levels of the target application.

Part Context

This part belongs to the DMN series of dual MOSFETs from Diodes Incorporated. It is categorized under transistors and specifically within the MOSFET subcategory. The device is designed for general-purpose switching and amplification tasks in consumer electronics and industrial equipment requiring small form factor solutions.

Replacement Considerations

Consult the official Diodes Incorporated datasheet for electrically equivalent alternatives. No direct substitute part numbers are confirmed in the provided source material.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.