DMN2022UNS-13

$0.20

Description：MOSFET 2N-CH 20V 10.7A PWRDI3333
Series：-

SKU:2b8b9d689c5a Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 10.7A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：10.7A (Ta)
Rds On (Max) @ Id, Vgs：10.8mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1870pF @ 10V
Power - Max：1.2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PowerDI3333-8 (Type UXB)
Grade：-
Qualification：-

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DMN2022UNS-13

Overview

The DMN2022UNS-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the POWERDI®3333-8 surface-mount package and operates with a drain-source voltage (VDS) of 20 V and a gate-source voltage (VGSS) of ±10 V. The device provides a maximum continuous drain current (ID) of 10.7 A at +25°C, with a static drain-source on-resistance (RDS(ON)) of 10.8 mΩ at VGS = 4.5 V. Thermal characteristics include a junction-to-ambient thermal resistance (RθJA) of 107 °C/W under steady-state conditions. The component supports an operating temperature range from -55°C to +150°C.

Feature Summary

Dual N-channel configuration integrated into a single compact package
Low input capacitance and fast switching speed for high efficiency
Integrated ESD protection up to 2kV
Totally lead-free and fully RoHS compliant

Applications

Power management functions
Load switch applications

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The suffix '-13' indicates a tape and reel packaging format containing 3000 units per reel. Confirm that the required packaging variant aligns with automated assembly equipment specifications. Ensure compliance with moisture sensitivity level requirements during storage and handling procedures.

Selection Notes

Select this component when a low-profile dual N-channel solution is required for 20 V power systems. Evaluate the RDS(ON) values across different gate drive voltages to ensure compatibility with available logic levels. Consider the thermal resistance parameters and PCB copper area requirements to maintain safe junction temperatures during operation.

Part Context

This component belongs to the DMN series of dual N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The part is intended for high-efficiency power management applications requiring compact form factors.