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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V X4-DSN1313-
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The DMN2024LCA4-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a common drain configuration with a maximum drain-source voltage (VDSS) of 20V and a typical static source-source on-resistance (RSS(ON)) of 20mΩ at VGS = 4.5V. The device supports a continuous source current of 8.3A at TA = +25°C and has a total gate charge (Qg) of 28.5nC. It operates within a junction temperature range of -55°C to +150°C and is housed in an X4-DSN1313-4 package measuring 1.35mm x 1.35mm with a height of 0.22mm.
Feature Summary
- Common drain configuration designed to minimize on-state resistance for reduced conduction losses.
- Ultra-fast switching performance achieved through low total gate charge.
- Low turn-on potential enabled by a typical gate threshold voltage of 0.9V.
- Integrated electrostatic discharge (ESD) protection on the gate terminal.
Applications
- Battery management systems
- Load switches
- Battery protection circuits
Procurement Notes
Verify the component authenticity by checking the marking code against the official date code key provided in the datasheet. Confirm that the ordering suffix '-7' corresponds to the specified tape and reel packing quantity of 3000 units. Ensure compliance with RoHS, halogen-free, and antimony-free requirements as defined by the manufacturer's quality standards before finalizing procurement.
Selection Notes
Select this component when designing high-efficiency power management applications requiring a compact footprint. The 20V rating and 20mΩ on-resistance make it suitable for low-voltage DC-DC converters and portable devices. Evaluate thermal dissipation capabilities based on the specific PCB copper area and ambient operating conditions to ensure reliable operation within the specified temperature limits.
Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the X4-DSN1313-4 package, which provides a small form factor ideal for space-constrained designs. The series is engineered to balance low on-state resistance with superior switching characteristics for modern electronic applications.
Replacement Considerations
No public confirmed substitute part numbers are available in the documentation.
FAQ
What is the maximum continuous source current at 25°C?
The maximum continuous source current is 8.3A at an ambient temperature of +25°C with VGS set to 4.5V.
Does the device include ESD protection?
Yes, the DMN2024LCA4 includes integrated ESD protection specifically for the gate terminal.
What is the typical gate threshold voltage?
The typical gate threshold voltage (VGS(TH)) is 0.9V at a source current of 250μA.
