ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 7.5A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：7.5A (Ta), 21A (Tc)
- Rds On (Max) @ Id, Vgs：20.2mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：647pF @ 10V
- Power - Max：810mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：U-DFN2030-6 (Type B)
- Grade：-
- Qualification：-
Download product information
Overview
The DMN2024UFU-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2030-6 surface-mount package with a drain-source voltage (V_DSS) of 20 V and a maximum continuous drain current (I_D) of 21 A at TC = +25°C. The device exhibits a low on-state resistance (R_DS(ON)) of 20.2 mΩ at V_GS = 4.5 V and 23.5 mΩ at V_GS = 2.5 V. Total gate charge (Q_G) is 6.5 nC at V_GS = 4.5 V and 14.8 nC at V_GS = 10 V. Operating temperature ranges from -55°C to +150°C, with thermal resistance (junction-to-ambient) rated at 155 °C/W under steady-state conditions.
Feature Summary
- Dual N-channel configuration designed for high-efficiency power management applications
- Low on-state resistance combined with superior switching performance
- ESD protected gate structure for enhanced reliability
Applications
- Battery Management Systems
- DC-DC Converters
- General Power Management Functions
Procurement Notes
Verify the specific ordering suffix '-13' against official Diodes Incorporated documentation to confirm the 10,000-unit tape and reel packaging format. Ensure that component authenticity is validated through authorized distribution channels to prevent counterfeit risks. Cross-reference the datasheet revision number DS41811 Rev. 6 to guarantee alignment with current manufacturing specifications and electrical characteristics.
Selection Notes
Select this component when a compact dual N-channel solution is required for 20 V systems. The U-DFN2030-6 package provides a small footprint suitable for space-constrained designs. Evaluate the R_DS(ON) values at the intended gate drive voltage (2.5 V or 4.5 V) to ensure conduction losses meet system efficiency targets. Confirm that the thermal dissipation requirements align with the specified junction-to-ambient thermal resistance.
Part Context
This part belongs to the DMN series of dual N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining robust switching capabilities. The DMN2024UFU variant specifically utilizes the U-DFN2030-6 case style, distinguishing it from other series members that may employ SOIC or SOT packages.
Replacement Considerations
Consult the official Diodes Incorporated catalog for verified equivalent parts within the DMN series. Do not substitute with components lacking confirmed pinout compatibility or identical electrical ratings without rigorous validation.
